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HomeDefect and Diffusion ForumDefect and Diffusion Forum Vols. 183-185

Defect and Diffusion Forum Vols. 183-185

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.183-185

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Paper Title Page

Recent Advances in Defect Characterization in 6H-SiC Using Deep Level Transient Spectroscopy and Positron Annihilation Spectroscopy

Authors: C.C. Ling, C.D. Beling, M. Gong, X.D. Chen, S. Fung

1

Electronic State, Atomic Configuration and Local Motion of Hydrogen around Carbon in Silicon

Authors: Y. Kamiura, K. Fukuda, Y. Yamashita, T. Ishiyama

25

Recent Advances in the Application of Slow Positron Beams to the Study of Ion Implantation Defects in Silicon

Authors: A.P. Knights, Paul G. Coleman

41

Diffusion Processes in Strained Silicon Germanium Island Structures

Authors: T. Walther

53

Damage in III-V Semiconductors from very Low-Energy Process Plasmas

Authors: Mahfuzur Rahman

61

Influence of In-Doping on the Crystalline Quality of GaAs Epilayers on Si Substrates

Authors: Y. Takano, Shunro Fuke

77

Point Defects in III-V Compound Semiconductors

Authors: N. Chen

85

On the Role of Interdiffusion during the Growth of Ge on Si(001) and Si(111)

Authors: R. Koch, B. Wassermann, G. Wedler

95

Point Defects and their Diffusion in Mercury Cadmium Telluride: Investigation Based upon High-Resolution X-Ray Diffraction

Authors: N. Mainzer, E. Zolotoyabko

103

Morphological, Structural and Electronic Damage on InAs and InSb Surfaces Induced by (Reactive) Ion Beam Etching

Authors: F. Frost, G. Lippold, A. Schindler, F. Bigl

127

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