Influence of In-Doping on the Crystalline Quality of GaAs Epilayers on Si Substrates

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Periodical:

Defect and Diffusion Forum (Volumes 183-185)

Edited by:

D.J. Fisher

Pages:

77-84

DOI:

10.4028/www.scientific.net/DDF.183-185.77

Citation:

Y. Takano and S. Fuke, "Influence of In-Doping on the Crystalline Quality of GaAs Epilayers on Si Substrates", Defect and Diffusion Forum, Vols. 183-185, pp. 77-84, 2000

Online since:

August 2000

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$35.00

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