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HomeDefect and Diffusion ForumDefect and Diffusion Forum Vols. 183-185Influence of In-Doping on the Crystalline Quality...

Influence of In-Doping on the Crystalline Quality of GaAs Epilayers on Si Substrates

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Defects and Diffusion in Semiconductors III

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Periodical:

Defect and Diffusion Forum (Volumes 183-185)

Pages:

77-84

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.183-185.77

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Online since:

August 2000

Authors:

Y. Takano, Shunro Fuke

Keywords:

GaAs-on-Si, InGaAs, Lattice-Mismatched Epitaxy, MOVPE, Thermal Cycle Annealing, Thermal Strain, Threading Dislocation Density

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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