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Point Defects in III-V Compound Semiconductors
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On the Role of Interdiffusion during the Growth of Ge on Si(001) and Si(111)
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Morphological, Structural and Electronic Damage on InAs and InSb Surfaces Induced by (Reactive) Ion Beam Etching
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Defects and Morphologies in In_0.8Ga_0.2As/InAlAs/InP(001) for High Electron-Mobility Transistors
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HomeDefect and Diffusion ForumDefect and Diffusion Forum Vols. 183-185On the Role of Interdiffusion during the Growth of...

On the Role of Interdiffusion during the Growth of Ge on Si(001) and Si(111)

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Defects and Diffusion in Semiconductors III

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Periodical:

Defect and Diffusion Forum (Volumes 183-185)

Pages:

95-102

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.183-185.95

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Online since:

August 2000

Authors:

R. Koch, B. Wassermann, G. Wedler

Keywords:

Germanium, Interdiffusion, Quantum Dot (QD), Silicon, Strain Relaxation, Stress

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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