On the Role of Interdiffusion during the Growth of Ge on Si(001) and Si(111)

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Periodical:

Defect and Diffusion Forum (Volumes 183-185)

Edited by:

D.J. Fisher

Pages:

95-102

DOI:

10.4028/www.scientific.net/DDF.183-185.95

Citation:

R. Koch et al., "On the Role of Interdiffusion during the Growth of Ge on Si(001) and Si(111)", Defect and Diffusion Forum, Vols. 183-185, pp. 95-102, 2000

Online since:

August 2000

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$35.00

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