Defects and Morphologies in In0.8Ga0.2As/InAlAs/InP(001) for High Electron-Mobility Transistors

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Periodical:

Defect and Diffusion Forum (Volumes 183-185)

Edited by:

D.J. Fisher

Pages:

147-152

DOI:

10.4028/www.scientific.net/DDF.183-185.147

Citation:

J. Wu and F. Lin, "Defects and Morphologies in In0.8Ga0.2As/InAlAs/InP(001) for High Electron-Mobility Transistors", Defect and Diffusion Forum, Vols. 183-185, pp. 147-152, 2000

Online since:

August 2000

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