Paper Titles

Damage in III-V Semiconductors from very Low-Energy Process Plasmas
p.61

Influence of In-Doping on the Crystalline Quality of GaAs Epilayers on Si Substrates
p.77

Point Defects in III-V Compound Semiconductors
p.85

On the Role of Interdiffusion during the Growth of Ge on Si(001) and Si(111)
p.95

Point Defects and their Diffusion in Mercury Cadmium Telluride: Investigation Based upon High-Resolution X-Ray Diffraction
p.103

Morphological, Structural and Electronic Damage on InAs and InSb Surfaces Induced by (Reactive) Ion Beam Etching
p.127

Defects and Morphologies in In_0.8Ga_0.2As/InAlAs/InP(001) for High Electron-Mobility Transistors
p.147

Diffusion of Zinc in InP, InAsP and InGaAs by the Metal-Organic Vapor-Phase Diffusion Technique
p.153

Effect of Implant Temperature on Extended Defects Craeted by Ion Implantation in Silicon
p.163

HomeDefect and Diffusion ForumDefect and Diffusion Forum Vols. 183-185Point Defects and their Diffusion in Mercury...

Point Defects and their Diffusion in Mercury Cadmium Telluride: Investigation Based upon High-Resolution X-Ray Diffraction

Article Preview

Abstract:

You might also be interested in these eBooks

Defects and Diffusion in Semiconductors III

Info:

Periodical:

Defect and Diffusion Forum (Volumes 183-185)

Pages:

103-126

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.183-185.103

Citation:

Cite this paper

Online since:

August 2000

Authors:

N. Mainzer, E. Zolotoyabko

Keywords:

Defect Migration, Diffusion, II-VI Semiconductors, Implantation Damage, Ion Implantation, Lattice Parameter, Non-Destructive Characterization, Percolation Problem, Point Defect, X-Ray Diffraction (XRD)

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2000 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: