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HomeDefect and Diffusion ForumDefect and Diffusion Forum Vols. 183-185Damage in III-V Semiconductors from very...

Damage in III-V Semiconductors from very Low-Energy Process Plasmas

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Defects and Diffusion in Semiconductors III

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Periodical:

Defect and Diffusion Forum (Volumes 183-185)

Pages:

61-76

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.183-185.61

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Online since:

August 2000

Authors:

Mahfuzur Rahman

Keywords:

Channeling, Diffusion, Dry-Etch Damage, Etching, GaAs, InGaAs, Ion Implantation, Photoluminescence (PL), Quantum Well, Radiation-Enhanced Diffusion, Reactive Ion Etching

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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