Recent Advances in Defect Characterization in 6H-SiC Using Deep Level Transient Spectroscopy and Positron Annihilation Spectroscopy
p.1
p.1
Electronic State, Atomic Configuration and Local Motion of Hydrogen around Carbon in Silicon
p.25
p.25
Recent Advances in the Application of Slow Positron Beams to the Study of Ion Implantation Defects in Silicon
p.41
p.41
Diffusion Processes in Strained Silicon Germanium Island Structures
p.53
p.53
Damage in III-V Semiconductors from very Low-Energy Process Plasmas
p.61
p.61
Influence of In-Doping on the Crystalline Quality of GaAs Epilayers on Si Substrates
p.77
p.77
Point Defects in III-V Compound Semiconductors
p.85
p.85
On the Role of Interdiffusion during the Growth of Ge on Si(001) and Si(111)
p.95
p.95
Point Defects and their Diffusion in Mercury Cadmium Telluride: Investigation Based upon High-Resolution X-Ray Diffraction
p.103
p.103
Recent Advances in the Application of Slow Positron Beams to the Study of Ion Implantation Defects in Silicon
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Periodical:
Defect and Diffusion Forum (Volumes 183-185)
Pages:
41-52
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Online since:
August 2000
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© 2000 Trans Tech Publications Ltd. All Rights Reserved
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