Recent Advances in the Application of Slow Positron Beams to the Study of Ion Implantation Defects in Silicon

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Periodical:

Defect and Diffusion Forum (Volumes 183-185)

Edited by:

D.J. Fisher

Pages:

41-52

DOI:

10.4028/www.scientific.net/DDF.183-185.41

Citation:

A.P. Knights and P. G. Coleman, "Recent Advances in the Application of Slow Positron Beams to the Study of Ion Implantation Defects in Silicon", Defect and Diffusion Forum, Vols. 183-185, pp. 41-52, 2000

Online since:

August 2000

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$35.00

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