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Recent Advances in Defect Characterization in 6H-SiC Using Deep Level Transient Spectroscopy and Positron Annihilation Spectroscopy
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HomeDefect and Diffusion ForumDefect and Diffusion Forum Vols. 183-185Recent Advances in Defect Characterization in...

Recent Advances in Defect Characterization in 6H-SiC Using Deep Level Transient Spectroscopy and Positron Annihilation Spectroscopy

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Defects and Diffusion in Semiconductors III

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Periodical:

Defect and Diffusion Forum (Volumes 183-185)

Pages:

1-24

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.183-185.1

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Online since:

August 2000

Authors:

C.C. Ling, C.D. Beling, M. Gong, X.D. Chen, S. Fung

Keywords:

Defect, DLTS, Electron Irradiation, Ion Implantation, PAS, Silicon Carbide (SiC)

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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