Recent Advances in Defect Characterization in 6H-SiC Using Deep Level Transient Spectroscopy and Positron Annihilation Spectroscopy

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Periodical:

Defect and Diffusion Forum (Volumes 183-185)

Edited by:

D.J. Fisher

Pages:

1-24

DOI:

10.4028/www.scientific.net/DDF.183-185.1

Citation:

C.C. Ling et al., "Recent Advances in Defect Characterization in 6H-SiC Using Deep Level Transient Spectroscopy and Positron Annihilation Spectroscopy", Defect and Diffusion Forum, Vols. 183-185, pp. 1-24, 2000

Online since:

August 2000

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