Paper Titles

Recent Advances in the Application of Slow Positron Beams to the Study of Ion Implantation Defects in Silicon
p.41

Diffusion Processes in Strained Silicon Germanium Island Structures
p.53

Damage in III-V Semiconductors from very Low-Energy Process Plasmas
p.61

Influence of In-Doping on the Crystalline Quality of GaAs Epilayers on Si Substrates
p.77

Point Defects in III-V Compound Semiconductors
p.85

On the Role of Interdiffusion during the Growth of Ge on Si(001) and Si(111)
p.95

Point Defects and their Diffusion in Mercury Cadmium Telluride: Investigation Based upon High-Resolution X-Ray Diffraction
p.103

Morphological, Structural and Electronic Damage on InAs and InSb Surfaces Induced by (Reactive) Ion Beam Etching
p.127

Defects and Morphologies in In_0.8Ga_0.2As/InAlAs/InP(001) for High Electron-Mobility Transistors
p.147

HomeDefect and Diffusion ForumDefect and Diffusion Forum Vols. 183-185Point Defects in III-V Compound Semiconductors

Point Defects in III-V Compound Semiconductors

Article Preview

Abstract:

You might also be interested in these eBooks

Defects and Diffusion in Semiconductors III

Info:

Periodical:

Defect and Diffusion Forum (Volumes 183-185)

Pages:

85-94

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.183-185.85

Citation:

Cite this paper

Online since:

August 2000

Authors:

N. Chen

Keywords:

Compound Semiconductor, Deep Level Centres, Point Defect, Stoichiometry

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2000 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: