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HomeDefect and Diffusion ForumDefect and Diffusion Forum Vols. 183-185Morphological, Structural and Electronic Damage on...

Morphological, Structural and Electronic Damage on InAs and InSb Surfaces Induced by (Reactive) Ion Beam Etching

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Defects and Diffusion in Semiconductors III

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Periodical:

Defect and Diffusion Forum (Volumes 183-185)

Pages:

127-146

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.183-185.127

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Online since:

August 2000

Authors:

F. Frost, G. Lippold, A. Schindler, F. Bigl

Keywords:

Atomic Force Microscope (AFM), Damage, Etching, InAs, InSb, Ion Beam, Raman Spectroscopy, Smoothing

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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