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HomeDefect and Diffusion ForumDefect and Diffusion Forum Vols. 183-185Effect of Implant Temperature on Extended Defects...

Effect of Implant Temperature on Extended Defects Craeted by Ion Implantation in Silicon

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Defects and Diffusion in Semiconductors III

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Periodical:

Defect and Diffusion Forum (Volumes 183-185)

Pages:

163-170

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.183-185.163

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Online since:

August 2000

Authors:

J. Wong-Leung, S. Fatima, C. Jagadish, J.D. FitzGerald

Keywords:

Critical Dose, Interstitial Defects, Ion Implantation, Loop, Rod-Like Defects, Silicon

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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