Effect of Implant Temperature on Extended Defects Craeted by Ion Implantation in Silicon

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Periodical:

Defect and Diffusion Forum (Volumes 183-185)

Edited by:

D.J. Fisher

Pages:

163-170

DOI:

10.4028/www.scientific.net/DDF.183-185.163

Citation:

J. Wong-Leung et al., "Effect of Implant Temperature on Extended Defects Craeted by Ion Implantation in Silicon", Defect and Diffusion Forum, Vols. 183-185, pp. 163-170, 2000

Online since:

August 2000

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$35.00

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