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HomeDefect and Diffusion ForumDefect and Diffusion Forum Vols. 183-185Energetics of Extrinsic Defects in Si and their...

Energetics of Extrinsic Defects in Si and their Role in Nonequilibrium Dopant Diffusion

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Defects and Diffusion in Semiconductors III

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Periodical:

Defect and Diffusion Forum (Volumes 183-185)

Pages:

199-206

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.183-185.199

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Online since:

August 2000

Authors:

Fuccio Cristiano, B. Colombeau, A. Claverie

Keywords:

Extended Defects, Ion Implantation, TEM, Transient Enhanced Diffusion TED

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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