The third annual retrospective of the latest results in the field of defects and diffusion in semiconductors covers the period from mid-1999 to mid-2000. As usual, the coverage also includes, in addition to 'traditional' semiconductors, the more important of the nitride and silicide semiconductors.

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eBook:

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ToC:

Table of contents

Editors:

Dr. David J. Fisher

DOI:

https://doi.org/10.4028/b-N8navy

THEMA:

TGM

BISAC:

TEC021000

Keywords:

Carbon, Defect, Diffusion, Dislocation Dipoles, DLTS, Electron Irradiation, Energy Levels, Etching, In-Diffusion, InGaAs, Ion Implantation, MOVPE, Point Defect, Precipitation, Reactive Ion Etching, Silicon, Stress, TEM, Transient Enhanced Diffusion TED, Vacancy

Pages:

560

Year:

2000

ISBN-13 (softcover):

9783908450542

ISBN-13 (CD):

9783035709131

ISBN-13 (eBook):

9783035706970

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