Books by Keyword: Vacancy

Description: The book includes both fundamental and technological aspects of defects in semiconductor materials and devices, including photovoltaics.
Volume is indexed by Thomson Reuters CPCI-S (WoS).
The 74 papers are grouped as follows: I. Defect engineering in silicon solar cells; II. Structural and production issues in cast silicon materials for solar cells; III. Characterisation of silicon for solar cells; IV. Intrinsic point defects in silicon; V. Light impurities in silicon-based materials; VI. Metals in silicon: fundamental properties and gettering; VII. Extended and implantation-related defects in silicon; VIII. Surfaces, passivation and processing; IX. Germanium-based devices and materials; X. Semiconductors other than silicon and germanium; XI. Nanostructures and new materials systems.

Description: Volume is indexed by Thomson Reuters BCI (WoS).
Volume 329 of the journal, Defect and Diffusion Forum, comprises a handy compilation of data on dislocation reactions, and stacking-fault energies for a wide range of materials including carbon, carbides, nitrides, oxides, silica, silicates and borides. It also contains original papers on the Interaction with Vacancies in Tungsten, Defects in Pure Aluminum and 3003 Aluminum Alloy, Nanocrystalline NiAl Alloys Prepared by Mechanical Alloying, Activation Enthalpy for Defect Formation in 5754 Alloys, Defect Analysis of 316LSS during Powder Injection Moulding, Effect of Hydrogen on the Microhardness of Tin Brass Heat Exchanger Tube, Nuclear and Electrical Methods for Estimating the Activation Enthalpy of Defect Formation in 2024 Alloys, Artificial Ageing Effect on 2024 Alloy, Natural Convection Flow Simulation of Nanofluid in a Square Cavity, Theoretical Models for Point Defect Calculations, Diffusion Problem of New Phase Inclusion Growth in Bounded Regions of Oversaturated Solid Solution, Pressureless Sintering and Characterization of Al₂O₃-SiO₂-ZrO₂ Composites, Electrical Properties of Zr-Doped La₂O₃ Nanocrystallites, Effect of Post-Deposition Annealing on Optical Properties of Thermally-Evaporated V₂O₅ Thin Film, Electrical Conductivity and Phase Transition Studies in the ZrO₂-CdO System, Growth of ZnO Thin Films on Silicon Substrates by Atomic Layer Deposition, Observation of Dielectric Peaks in Glassy Se₇₀Te₂₀Sn₁₀ Alloy, Spin Hamiltonian Parameters for the Tetragonal [Fe(CN)₄Cl₂]^5- Complex in NaCl.

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
The papers contained herein cover the most important and timely issues in the field of “Gettering and Defect Engineering in Semiconductor Technology”, ranging from the theoretical analysis of defect problems to practical engineering solutions, with the emphasis on Si-based materials. Apart from the traditional topics of defect and materials engineering, characterization, modeling and simulation, and the co-integration of various material classes, topics such as materials for solar cells and photonics are discussed. Defects in graphene and in nanocrystals and nanowires are also treated, making this a very up-to-date survey of the field.

Description: This twelfth volume in the series covering the latest results in the field includes abstracts of papers which appeared between the publication of Annual Retrospective XI (Volume 293) and the end of September 2010 (journal availability permitting).

Description: Volume is indexed by Thomson Reuters BCI (WoS).
This first volume, in a new series covering entirely general results in the fields of defects and diffusion, includes abstracts of papers which appeared between the beginning of 2008 and the end of October 2009 (journal availability permitting).

Description: This collection aims to address the fundamental aspects, as well as the technological problems, which are associated with defects in electronic materials and devices.

Description: Volume is indexed by Thomson Reuters BCI (WoS).
This special-topic volume‚ Advances in Light-Emitting Materials’, makes an important contribution to the field of silicon and III-nitride semiconductors. It begins with a brief history of visible-light emitting diodes. However, silicon is currently expanding from micro-electronics and into photonics. Due to its unsuitable band-gap, it has not previously been the material-of-choice for opto-electronic integration. That is now beginning to change and silicon devices have been developed which have the capability to emit, modulate, guide and detect light and which can be combined with microelectronics to form electronic and photonic integrated circuits.

Description: This tenth volume in the series covering the latest results in the field includes abstracts of papers which appeared between the publication of Annual Retrospective IX (Volume 265) and the end of May 2008 (journal availability permitting). As well as the 452 metals abstracts, the issue includes – in line with the new editorial policy of including original papers on all of the major material groups: “Defect Investigation of Plastically Deformed Al 5454 Wrought Alloy Using PADBS and Electrical Measurements” (Abdel-Rahman, Kamel, Lotfy, Badawi and Abdel-Rahman), “Activation Enthalpy of Dislocation Migration in Aircraft (Aerospace) (2024) Alloy by Positron Spectroscopy” (Abdel-Rahman, Abdallah, Hassan and Badawi), “Effect of Irradiation Dose on AlCu6.5 Alloy using Positron Annihilation Doppler Broadening Technique” (Abdel-Rahman, Lotfy, Abdel-Rahman and Badawi), “Dependence of Mono-Vacancy Formation Energy on the Parameter of Ashcroft's Potential” (Ghorai), “X-Ray Characterization of Ag Impurities in Na1-xAgxCl” (Hazeen, Syed Ali, Prema Rani and Saravanan), “Self-Organization Behavior of Sub-Micron CdO Grains Grown during Vapour-Solid Transition” (Zhang, Wang and Li), “Studies of the Local Structure and the Spin Hamiltonian Parameters for Co2+ in CaTiO3” (Lu, Wu, Zhang and Wei).

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
This collection comprises 117 peerreviewed papers invited from over 70 research institutions in more than 25 countries. These papers, written by internationally recognized experts in the field, review the current state-of-the-art and predict future trends in their respective authors’ fields of research. Fundamental aspects, as well as technological problems associated with defects in electronic materials and devices, are addressed

Description: These volumes contain the contributions presented at DIMAT 2004: the Sixth International Conference on Diffusion in Materials, held in Cracow, under the Patronage of the AGH University of Science and Technology, the Institute of Metallurgy and Materials Science of the Polish Academy of Sciences and the Cracow University of Technology.
Volume is indexed by Thomson Reuters CPCI-S (WoS)