Books by Keyword: Vacancy

Description: This seventh volume in the series covering the latest results in the field includes abstracts of papers which appeared between the publication of Annual Retrospective VI (Volumes 224-225) and the end of November 2004 (allowing for vagaries of journal availability).

Description: This seventh volume in the series covering the latest results in the field includes abstracts of papers which appeared between the publication of Annual Retrospective VI (Volumes 221-223) and the end of September 2004 (allowing for vagaries of journal availability).

Description: There is no doubt that, when it comes to the study of the structures and defects of materials, there is presently no technique that rivals positron annihilation. The increasing demands for higher accuracy and reliability provide a constant stimulus to the field, and the present work presents the newest and most important scientific discoveries made in the field of positron annihilation.
Volume is indexed by Thomson Reuters CPCI-S (WoS).

Description: This issue covers, in the form of abstracts, the work which has been reported between the previous retrospective and the end of 2002. The choice of abstracted papers is guided by criteria such as accessibility, data content and description of important new techniques, phenomena or anomalies. There is also a thorough coverage of qualitative features of diffusion and defect phenomena, computer modelling and theory. The volume also includes invited review and experimental papers which treat a wide range of topics in the field.

Description: Gettering and Defect Engineering in Semiconductor Technology are discussed here,with particular emphasis being placed on device applications. Fundamental aspects,as well as technological problems which are associated with defects in electronic materials and devices, are addressed.
Volume is indexed by Thomson Reuters CPCI-S (WoS).
The topics in this volume were selected on the basis that single-crystal Si, and Si-based, semiconductors will dominate microelectronics until far into the 21st century. The main reason for the overwhelming success of silicon technology is economic: the production cost per area increases by a factor of 5, or even 10, on going from 200 mm Si wafers to compound semiconductors or other substrate materials.

Description: This book covers, on close to 2000 pages, all aspects of basic and applied diffusion research in all important engineering materials, including metals and intermetallics, elemental and compound semiconductors, amorphous and nanocrystalline materials and oxides.
Volume is indexed by Thomson Reuters CPCI-S (WoS)

Description: The third annual retrospective of the latest results in the field of defects and diffusion in semiconductors covers the period from mid-1999 to mid-2000. As usual, the coverage also includes, in addition to 'traditional' semiconductors, the more important of the nitride and silicide semiconductors.

Description: With the continuing evolution of fabrication techniques and new structures for semiconducting materials, the list of new defect phenomena has also increased apace. The present book discusses point defects, defect-assisted diffusion, metal impurity additions, metastable defects, magnetic hyperfine interaction of deep donors in compound semiconductors, and oxygen and hydrogen impurity defects.

Description: The phenomena of grain boundary diffusion and grain boundary segregation play major roles in determining the properties and behavior of a wide variety of materials. Even though the basic principles have been known for a long time, the field continues to yield a number of very challenging questions.

Description: Modern Technology depends upon silicon chips, and life as we know it would hardly be possible without semiconductor devices. Control over a given semiconductor's electronic properties is achieved via defect engineering, and the scientific and technical challenges in this field are manifold.
Volume is indexed by Thomson Reuters CPCI-S (WoS).