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Gettering and Defect Engineering in Semiconductor Technology IX
Subtitle:
GADEST 2001
Description:
Gettering and Defect Engineering in Semiconductor Technology are discussed here,with particular emphasis being placed on device applications. Fundamental aspects,as well as technological problems which are associated with defects in electronic materials and devices, are addressed.
Volume is indexed by Thomson Reuters CPCI-S (WoS).
The topics in this volume were selected on the basis that single-crystal Si, and Si-based, semiconductors will dominate microelectronics until far into the 21st century. The main reason for the overwhelming success of silicon technology is economic: the production cost per area increases by a factor of 5, or even 10, on going from 200 mm Si wafers to compound semiconductors or other substrate materials.
Volume is indexed by Thomson Reuters CPCI-S (WoS).
The topics in this volume were selected on the basis that single-crystal Si, and Si-based, semiconductors will dominate microelectronics until far into the 21st century. The main reason for the overwhelming success of silicon technology is economic: the production cost per area increases by a factor of 5, or even 10, on going from 200 mm Si wafers to compound semiconductors or other substrate materials.
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Info:
eBook:
ToC:
Editors:
V. Raineri, F. Priolo, M. Kittler and H. Richter
THEMA:
TGM
BISAC:
TEC021000
Keywords:
Details:
Proceedings of the 9th Int. Conference on Gettering anf Defect Engineering in Semiconductor Technology , S. Tecla, Italy
Pages:
850
Year:
2002
ISBN-13 (softcover):
9783908450641
ISBN-13 (CD):
9783035709230
ISBN-13 (eBook):
9783035707076
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