Books by Keyword: Point Defect

Description: This special edition contains articles on the latest research results and technological solutions in materials science and industrial manufacturing. The special collection will be helpful for specialists from applied materials science, machinery, electronic industry and chemical production.

Description: The International Conference on Silicon Carbide and Related Materials (ICSCRM) is the most important technical conference series on silicon carbide (SiC) and related materials. Started in Washington, D.C. in 1987, the conference series developed into a bi-annual global forum on SiC from its crystal growth to the reliability in application. After five conferences in the U.S., ICSCRM has been held every two years, alternating between USA, Europe, and Japan. The last three Conferences were held in Giardini Naxos, Italy (2015), Washington, D.C. , USA (2017), and Kyoto, Japan (2019). Due to the pandemic situation in 2020 and 2021, the alternating European edition, the 13th ECSCRM, has been held in 2021, and the 19th ICSCRM has been postponed to 2022. The 19th edition of ICSCRM will be the last of its kind – starting in 2023, the conference series will be united with the European edition. It will form an annual event under the well-established name ICSCRM and a new rotation schedule integrating the SiC communities worldwide.

Description: The book includes both fundamental and technological aspects of defects in semiconductor materials and devices, including photovoltaics.
Volume is indexed by Thomson Reuters CPCI-S (WoS).
The 74 papers are grouped as follows: I. Defect engineering in silicon solar cells; II. Structural and production issues in cast silicon materials for solar cells; III. Characterisation of silicon for solar cells; IV. Intrinsic point defects in silicon; V. Light impurities in silicon-based materials; VI. Metals in silicon: fundamental properties and gettering; VII. Extended and implantation-related defects in silicon; VIII. Surfaces, passivation and processing; IX. Germanium-based devices and materials; X. Semiconductors other than silicon and germanium; XI. Nanostructures and new materials systems.

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
This volume comprises a collection of papers presented at the 9th international conference on Global Research and Education, “INTER-ACADEMIA 2010”, held from August 9th to 12th, 2010 at the Riga Technical University, Riga, Latvia. It contains 88 contributions, including 4 invited papers, from more than 10 countries. The invited papers, presented by internationally recognized experts, review the state-of-the-art and future trends in each field of research. The peer-reviewed contributions are organized under the headings of: Physics and Technology, Chemistry, Biology and Medicine, and Computer Science and Modelling. This work thus offers a unique interdisciplinary view of the topics.

Description: Volume is indexed by Thomson Reuters BCI (WoS).
This first volume, in a new series covering entirely general results in the fields of defects and diffusion, includes abstracts of papers which appeared between the beginning of 2008 and the end of October 2009 (journal availability permitting).

Description: This specialist book, the first of its kind, includes original and review articles which describe magnetic shape-memory alloys and the magnetic shape-memory effect.

Description: Diffusion-controlled processes still remain the most important and interesting phenomena in materials science. Among the problems which are currently to the fore, are the synergy of diffusion and morphological evolution, the initial stages of solid-state reactions, the analysis of nano- materials and related phenomena, thermo- and electromigration, and the reliability of solder joints and interconnects in microelectronic devices. A number of challenging problems still remain within the “classical” areas of nucleation, reactive- and inter-diffusion, phase growth in multicomponent and binary systems, and decomposition and ripening.
Volume is indexed by Thomson Reuters CPCI-S (WoS)

Description: These volumes contain the contributions presented at DIMAT 2004: the Sixth International Conference on Diffusion in Materials, held in Cracow, under the Patronage of the AGH University of Science and Technology, the Institute of Metallurgy and Materials Science of the Polish Academy of Sciences and the Cracow University of Technology.
Volume is indexed by Thomson Reuters CPCI-S (WoS)

Description: This sixth volume in the series covering the latest results in the field includes abstracts of papers which appeared between the publication of Annual Retrospective V (Volumes 213-215) and the end of October 2003.

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
This book comprises the proceedings of the Second International School on Mechanical Spectroscopy; presented here as invited lectures (Part I) and contributed papers (Part II). After having originated merely as a technique for the study of internal friction, mechanical spectroscopy has developed strongly, during the past decade, into a tool which is now indispensable for making advances in the creation of new materials. This book will therefore provide an excellent reference source for every researcher working in the field.