Description: This book constitutes a comprehensive international forum on defect-related phenomena in wide-gap materials, crystalline or otherwise. Materials as diverse as SiO2, group-III nitride compounds, diamond, alkali halides, refractory oxides, and polymers are covered, and the "defects" considered include intrinsic point imperfections, dislocations, accidental impurities, intentional dopants, imperfect surfaces, nanocrystals in host matrices, and bonding defects in glasses.
Important unifying similarities of the phenomena are identified and investigative methods are presented which can be applied, almost across-the-board, to materials which share a wide transparency, deep traps, extensive stored energy in electron-hole pairs, and a low conduction-electron density.

Defects in Semiconductors 18

Edited by: M. Suezawa and H. Katayama-Yoshida

Online since: November 1995

Description: The study of defects in semiconductors has never been independent of the progress in semiconductor technology. With rapid development in semiconductor device technology, novel types of defects as well as very peculiar behavior of defects in semiconductors have been found one after another. New subjects in the basic study of defects have often been arisen from experiences in the practical field. Great progress has also been achieved in device production technology on the basis of the knowledge clarified in the basic field.

Defect and Diffusion Forum Vols. 119-120

Edited by: Graeme E. Murch

Online since: March 1995

Description: Journal issue

Defect and Diffusion Forum Vol. 28

Edited by: Fred H. Wohlbier and Dr. David J. Fisher

Online since: January 1982

Description: Defect and Diffusion Forum Vol. 28