The study of defects in semiconductors has never been independent of the progress in semiconductor technology. With rapid development in semiconductor device technology, novel types of defects as well as very peculiar behavior of defects in semiconductors have been found one after another. New subjects in the basic study of defects have often been arisen from experiences in the practical field. Great progress has also been achieved in device production technology on the basis of the knowledge clarified in the basic field.

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eBook:

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ToC:

Table of contents

Editors:

M. Suezawa and H. Katayama-Yoshida

DOI:

https://doi.org/10.4028/b-WcdL4Q

THEMA:

TGM

BISAC:

TEC021000

Keywords:

Carbon, Defect, Diffusion, Dislocation, DLTS, DX Centers, Electron Irradiation, GaAs, Gallium Nitride (GaN), Hydrogen, InP, Ion Implantation, Oxygen, Photoluminescence (PL), Point Defect, Positron Annihilation, Silicon, TEM, Transition Metal, Vacancy

Details:

Proceedings of the 18th International Conference on Defects in Semiconductors (ICDS-18), Sendai, Japan, July 1995

Pages:

2268

Year:

1995

ISBN-13:

9780878497164

ISBN-13 (CD):

9783038598183

ISBN-13 (eBook):

9783035705027

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