Books by Keyword: GaAs

Description: This periodical edition includes peer-reviewed scientific and engineering papers on all aspects of research in the area of nanoscience and nanotechnologies and wide practical application of the achieved results.

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
This book consists of a collection of 74 original peer-reviewed papers. They cover a wide range of topics in the interesting field of nano-structure related semiconductor photonics; a field which encompasses quantum dots, quantum wire, nano-wire, nano-rods, nano-crystals, photonic crystals, ZnO-based materials, III-V compound semiconductors, Si photonics and organic optoelectronic devices.

Description: This ninth volume in the series covering the latest results in the field includes abstracts of papers which appeared between the publication of Annual Retrospective VIII (Volumes 245-246) and the end of January 2007 (journal availability permitting).

Description: Modern Technology depends upon silicon chips, and life as we know it would hardly be possible without semiconductor devices. Control over a given semiconductor's electronic properties is achieved via defect engineering, and the scientific and technical challenges in this field are manifold.
Volume is indexed by Thomson Reuters CPCI-S (WoS).

Description: For one and a half decades, the application of positron annihilation to condensed-matter physics concentrated on the study of the Fermi surfaces of metals and alloys. As other, often more powerful, techniques for performing this type of study were developed, it appeared that condensed-matter positron physics was going to be relegated to being a niche interest. However, the situation changed dramatically when it was found that measurements of positron annihilation in metals were sensitive to the structures of well-known defects. This discovery, and subsequent research made it a major tool in materials science.
Volume is indexed by Thomson Reuters CPCI-S (WoS).

Description: The subject area of electronic devices has undergone a rapid expansion in recent years. New developments are continually accurring all over the world. Progress in the field of electronic devices is, however, dependent upon the production and characterization of device grade material. The science and technology of electronic materials has attracted somewhat less attention, as compared with device development.

Description: The first particle accelerators were built in the early 1930’s. For a long time, these devices were used exclusively by nuclear physicists. In the 1960’s, extensive developments in measuring techniques occurred, mainly as a result of newly developed semiconductor devices. Further strong interest arose from the semiconductor industry, and ion implantation became widely accepted as being the ultimate tool for Si-based device fabrication.

Description: The field of crystal growth has developed steadily with the rapid progress in microelectronics. The purpose of this book is to present a survey of the most recent results related to this subject area. The book will serve as both an up-to-date review for experts and as a reference work on crystal growth for younger scientists and for those who wish to keep track of the advances and technological trends in the field.

Description: The study of defects in semiconductors has never been independent of the progress in semiconductor technology. With rapid development in semiconductor device technology, novel types of defects as well as very peculiar behavior of defects in semiconductors have been found one after another. New subjects in the basic study of defects have often been arisen from experiences in the practical field. Great progress has also been achieved in device production technology on the basis of the knowledge clarified in the basic field.

Description: Journal Issue