Description: State-of-the-art reviews on all the major areas of interest are brought together in this book, namely the role of hydrogen during epitaxial growth, its entry into the material during processing, its subsequent diffusivity and bonding with dopants, other impurities or defects, its effect on device performance and reliability and positive uses for hydrogen in passivating surfaces.

Defects in Semiconductors 17

Edited by: Helmut Heinrich and Wolfgang Jantsch

Online since: October 1993

Description: This comprehensive issue presents 297 papers that cover a broad range of topics in the fundamental science of imperfections in semiconductor materials including the creation and/or origin, structure, electronic, optical, thermodynamical and chemical properties of defects, often also with strong relevance to technological problems in semiconductor devices.

Shallow Impurities in Semiconductors V

Edited by: Tsunemasa Taguchi

Online since: January 1993

Description: The volume presents the proceedings of the 5th International Conference on Shallow Impurities in Semiconductors, held in Kobe, Japan, August 1992.

Positron Annihilation - ICPA-9

Edited by: Zs. Kajcsos and Cs. Szeles

Online since: January 1992

Description: The volumes present over 400 reviewed papers on the present state of the art and future prospects in the wide field of research involving positrons. The foreword by Edward Teller and the summaries by Jean-Charles Abbe (Chemistry) and Alfred Seeger (Physics) demonstrate how the field is seen from "outside" and from "inside".