This comprehensive issue presents 297 papers that cover a broad range of topics in the fundamental science of imperfections in semiconductor materials including the creation and/or origin, structure, electronic, optical, thermodynamical and chemical properties of defects, often also with strong relevance to technological problems in semiconductor devices.

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eBook:

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ToC:

Table of contents

Editors:

Helmut Heinrich and Wolfgang Jantsch

DOI:

https://doi.org/10.4028/b-nL1xXf

THEMA:

TGM

BISAC:

TEC021000

Keywords:

Deep Level, Defect, Diffusion, DLTS, DX Center, DX Centers, Electron Irradiation, EPR, GaAs, Hydrogen, InP, Ion Implantation, Luminescence, Metastability, ODMR, Photoluminescence (PL), Positron Annihilation, Silicon, Uniaxial Stress, Vacancy

Details:

Proceedings of the 17th International Conference on Defects in Semiconductors (ICDS-17), Gmunden, Austria, July 1993

Pages:

1722

Year:

1994

ISBN-13:

9780878496716

ISBN-13 (CD):

9783038597964

ISBN-13 (eBook):

9783035704815

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