Books by Keyword: Electron Irradiation

Books

Edited by: Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Online since: March 2011
Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
This volume contains the proceedings of the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, on August 29th – September 2nd. The editions of ECSCRM have developed over the years and, today, ECSCRM is the leading European conference in the field of ‘SiC and related materials and their applications’. This volume is divided into five chapters ranging from ‘SiC growth’ to ‘Biosystems’ and thus represents a comprehensive coverage of the field.
Edited by: Dr. David J. Fisher
Online since: August 2000
Description: The third annual retrospective of the latest results in the field of defects and diffusion in semiconductors covers the period from mid-1999 to mid-2000. As usual, the coverage also includes, in addition to 'traditional' semiconductors, the more important of the nitride and silicide semiconductors.
Edited by: Gordon Davies and Maria Helena Nazaré
Online since: December 1997
Description: Modern Technology depends upon silicon chips, and life as we know it would hardly be possible without semiconductor devices. Control over a given semiconductor's electronic properties is achieved via defect engineering, and the scientific and technical challenges in this field are manifold.
Volume is indexed by Thomson Reuters CPCI-S (WoS).
Edited by: G.E. Matthews and R.T. Williams
Online since: January 1997
Description: This book constitutes a comprehensive international forum on defect-related phenomena in wide-gap materials, crystalline or otherwise. Materials as diverse as SiO2, group-III nitride compounds, diamond, alkali halides, refractory oxides, and polymers are covered, and the "defects" considered include intrinsic point imperfections, dislocations, accidental impurities, intentional dopants, imperfect surfaces, nanocrystals in host matrices, and bonding defects in glasses.
Important unifying similarities of the phenomena are identified and investigative methods are presented which can be applied, almost across-the-board, to materials which share a wide transparency, deep traps, extensive stored energy in electron-hole pairs, and a low conduction-electron density.
Edited by: M. Suezawa and H. Katayama-Yoshida
Online since: November 1995
Description: The study of defects in semiconductors has never been independent of the progress in semiconductor technology. With rapid development in semiconductor device technology, novel types of defects as well as very peculiar behavior of defects in semiconductors have been found one after another. New subjects in the basic study of defects have often been arisen from experiences in the practical field. Great progress has also been achieved in device production technology on the basis of the knowledge clarified in the basic field.
Edited by: Dr. David J. Fisher
Online since: January 1995
Description: Journal Issue
Edited by: Yuan-Jin He, Bi-Song Cao and Y.C. Jean
Online since: November 1994
Description: Positron Annihilation - ICPA-10 presents new results and ideas of researchers who seek more profound understanding of the nature of positron annihilation. All these scientific and technological thoughts are included in these two-volume proceedings, which contain 7 review talks, 203 contributed papers (among them, 20 are invited), and 3 summary talks. The volume is complete with keyword and author indices.
Edited by: Helmut Heinrich and Wolfgang Jantsch
Online since: October 1993
Description: This comprehensive issue presents 297 papers that cover a broad range of topics in the fundamental science of imperfections in semiconductor materials including the creation and/or origin, structure, electronic, optical, thermodynamical and chemical properties of defects, often also with strong relevance to technological problems in semiconductor devices.
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