Modern Technology depends upon silicon chips, and life as we know it would hardly be possible without semiconductor devices. Control over a given semiconductor's electronic properties is achieved via defect engineering, and the scientific and technical challenges in this field are manifold.
Volume is indexed by Thomson Reuters CPCI-S (WoS).

Purchase this book:

eBook

978-3-0357-0524-9

$198.00 *

Add to Cart

978-0-87849-786-7

$770.00

not available

eBook+Print

978-0-87849-786-7

$774.40 *

not available

* 1-User Access (Single User-Price). For Multi-User-Price please fill a contact form

Info:

eBook:

View eBook preview

ToC:

Table of contents

Editors:

Gordon Davies and Maria Helena Nazaré

DOI:

https://doi.org/10.4028/b-1oTh8B

THEMA:

TGM

BISAC:

TEC021000

Keywords:

Defect, Diffusion, Dislocation, DLTS, Electron Irradiation, Erbium, GaAs, Gallium Nitride (GaN), Hydrogen, Ion Implantation, Luminescence, Oxygen, Passivation, Photoluminescence (PL), Positron Annihilation, Silicon, Silicon Carbide (SiC), Silicon-Germanium (SiGe), Vacancy, ZnSe

Details:

Proceedings of the 19th International Conference on Defects in Semiconductors (ICDS-19), Aveiro, Portugal, July 1997

Pages:

1932

Year:

1997

ISBN-13:

9780878497867

ISBN-13 (CD):

9783038598404

ISBN-13 (eBook):

9783035705249

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions