Description: Ever since the work of W.E. Spear and P.G. LeComber had proved that an amorphous semiconductor could indeed also be substitutionally doped, research in the respective field has seen an nearly unprecedented development. The role of hydrogen in atomic and electronic structure as well as in the doping mechanism remains an outstanding problem addressed both to theoreticians and experimentalists, and a highly interesting challenge both to the scientist as well as the engineer.

Defects in Semiconductors 17

Edited by: Helmut Heinrich and Wolfgang Jantsch

Online since: October 1993

Description: This comprehensive issue presents 297 papers that cover a broad range of topics in the fundamental science of imperfections in semiconductor materials including the creation and/or origin, structure, electronic, optical, thermodynamical and chemical properties of defects, often also with strong relevance to technological problems in semiconductor devices.

Defects in Semiconductors I

Edited by: Nickolay T. Bagraev

Online since: January 1993

Description: This volume focuses on current theoretical and experimental investigations of defects in III-V and II-VI compounds, silicon, germanium, Si-Ge alloys, and amorphous semiconductors. The discussions also address the metastability and superconductivity induced by point defects, dislocations and processing in semiconductors.
An important feature of this book are the special papers on defects in SiC and IV-VI compounds, and the contributions on hot topics such as nonequilibrium diffusion, negative-U defects and several new techniques.