Engineering Research
Advanced Engineering Forum
Applied Mechanics and Materials
Engineering Chemistry
Engineering Innovations
Journal of Biomimetics, Biomaterials and Biomedical Engineering
International Journal of Engineering Research in Africa
Materials Science
Advanced Materials Research
Defect and Diffusion Forum
Diffusion Foundations and Materials Applications
Journal of Metastable and Nanocrystalline Materials
Journal of Nano Research
Key Engineering Materials
Materials Science Forum
Nano Hybrids and Composites
Solid State Phenomena
Engineering Series
Advances in Science and Technology
Construction Technologies and Architecture
Engineering Headway
Hydrogenated Amorphous Silicon
Description:
Ever since the work of W.E. Spear and P.G. LeComber had proved that an amorphous semiconductor could indeed also be substitutionally doped, research in the respective field has seen an nearly unprecedented development. The role of hydrogen in atomic and electronic structure as well as in the doping mechanism remains an outstanding problem addressed both to theoreticians and experimentalists, and a highly interesting challenge both to the scientist as well as the engineer.
Purchase this book:
eBook
978-3-0357-0660-4
$198.00 *
Print
978-3-908450-10-8
$457.00
not available
eBook+Print
978-3-908450-10-8
$524.00 *
not available
* 1-User Access (Single User-Price). For Multi-User-Price please fill a contact form
Info:
eBook:
ToC:
Editors:
Hans Neber-Aeschbacher
THEMA:
TGM
BISAC:
TEC021000
Keywords:
Amorphous Silicon, a-Si:H, Dangling Bond, Density of States (DOS), Doping, Hydrogenated Amorphous Silicon, Light-Induced Metastable Defects, Metastability, Mobility, Multilayer, Optical Property, Persistent Photoconductivity, Photoconductivity, Photoluminescence (PL), Recombination, Solar Cell, Structure, Superlattice, Transient Photoconductivity, Trapping
Pages:
1080
Year:
1995
ISBN-13 (softcover):
9783908450108
ISBN-13 (CD):
9783038599760
ISBN-13 (eBook):
9783035706604
Permissions CCC:
Permissions PLS:
Share: