Description: Volume is indexed by Thomson Reuters BCI (WoS).
Multiferroics: that is, materials which simultaneously exhibit both ferromagnetism and ferroelectricity - and also often ferroelasticity - now attract considerable attention because of the interesting physics involved and their promise for important practical applications. Typical multiferroics belong to the perovskite group of transition metal oxides, and include rare-earth manganites and ferrites. Several new multiferroic systems have been developed, during recent years, which exhibit very strong coupling between the ferroelectric and magnetic degrees of freedom. The present volume comprises both review articles, and research papers on various themes; with very little overlap. The authors of the review papers have generally kept in mind the unfamiliarity, of the field of ‘Ferroics and Multiferroics’, to newcomers. They cover the historical development of the field, and add their own contributions.

Mass and Charge Transport in Inorganic Materials III

Edited by: P. VINCENZINI and V. BUSCAGLIA

Online since: October 2006

Description: This collection presents 26 papers. Altogether, the collection offers a wealth of up-to-date information on Mass and Charge Transport in Inorganic Materials.

Spin Injection and Transport in Magnetoelectronics

Edited by: P. VINCENZINI and D. FIORANI

Online since: October 2006

Description: This collection presents 19 papers. Altogether, the collection offers a wealth of up-to-date information on Spin Injection and Transport in Magnetoelectronics.

Defects and Diffusion in Semiconductors II

Edited by: Dr. David J. Fisher

Online since: June 1999

Description: This second volume in the new-format coverage of the latest results in the field covers abstracts from the approximate period of mid-1998 to mid-1999. As always, due to the vagaries of some journal publication dates, abstracts of earlier work may be included in order that the present contents merge seamlessly with those of volumes 162-163; the previous issue in this sub-series.

Hydrogenated Amorphous Silicon

Edited by: Hans Neber-Aeschbacher

Online since: July 1995

Description: Ever since the work of W.E. Spear and P.G. LeComber had proved that an amorphous semiconductor could indeed also be substitutionally doped, research in the respective field has seen an nearly unprecedented development. The role of hydrogen in atomic and electronic structure as well as in the doping mechanism remains an outstanding problem addressed both to theoreticians and experimentalists, and a highly interesting challenge both to the scientist as well as the engineer.