Books by Keyword: Mobility

Description: The advancement of material engineering over the last few decades has allowed for the development of modern metallic and ceramic construction materials, composites, nanomaterials and various kinds of coatings with desired performance characteristics. They form the basis for the development of the automotive industry, the aviation industry, the chemical equipment industry, etc. They can function in ever higher temperatures and aggressive environments. On the other hand, the advancement of electronics requires the development of new and cheaper materials: semiconductors, insulators, materials with magnetic, ferrimagnetic or piezoelectric properties, etc. The desired properties of materials or their surface layers depend on chemical composition, dopants, and the concentration of point defects, through which the transport of ions and electrons takes place. The functional properties also depend on the nuances of production technologies which allow to obtain a specific texture and a desired concentration of ionic and electronic point defects. The monograph follows up on the issues related to the concentration of charge carriers in pure and doped oxides. Based on the diagrams of the concentration of point defects, the calculation results of the concentration of charge carriers and their mobility are presented, using the results of the studies on the electrical conductivity and the thermoelectric power in some specific oxides of 3d metals. In turn, the results of calculations of the ionic defect diffusion coefficients, conducted using the coefficients of self-diffusion and chemical diffusion as well as the concentration of ionic defects in these oxides, are presented. The given material will be useful to a wide range of researchers and developers of new materials with a wide range of required properties.

Description: This book is a collection of selected papers submitted to the AUTEX 2023 conference held at RMIT University, Melbourne, 26-28 June 2023. The themes of this edition are ecological aspects of textile production, supply chain management practice and training processes in the apparel industry, and some solutions and concepts in modern fashion design. The presented articles will be interesting and useful to specialists whose activity is related to the textile and apparel industry.

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
This volume contains the proceedings of the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, on August 29th – September 2nd. The editions of ECSCRM have developed over the years and, today, ECSCRM is the leading European conference in the field of ‘SiC and related materials and their applications’. This volume is divided into five chapters ranging from ‘SiC growth’ to ‘Biosystems’ and thus represents a comprehensive coverage of the field.

Description: This phenomenon (also known as the Compensation Effect) can occur in any situation which involves an activated process. However, the rule is still most commonly referred to in connection with diffusion phenomena. As the rule still tends to exist in a sort of limbo between fully accepted physical law and unexplained correlation, this volume presents a handy survey of relevant diffusion data reaching back as far as the 1930s.

Description: Grain Growth is one of the most fundamental microstructural changes, and occurs in all types of polycrystalline material. It is of major scientific interest, and of great importance in a wide range of industrial applications.

Description: Ever since the work of W.E. Spear and P.G. LeComber had proved that an amorphous semiconductor could indeed also be substitutionally doped, research in the respective field has seen an nearly unprecedented development. The role of hydrogen in atomic and electronic structure as well as in the doping mechanism remains an outstanding problem addressed both to theoreticians and experimentalists, and a highly interesting challenge both to the scientist as well as the engineer.