Books by Keyword: a-Si:H

Description: This phenomenon (also known as the Compensation Effect) can occur in any situation which involves an activated process. However, the rule is still most commonly referred to in connection with diffusion phenomena. As the rule still tends to exist in a sort of limbo between fully accepted physical law and unexplained correlation, this volume presents a handy survey of relevant diffusion data reaching back as far as the 1930s.

Description: The subject area of electronic devices has undergone a rapid expansion in recent years. New developments are continually accurring all over the world. Progress in the field of electronic devices is, however, dependent upon the production and characterization of device grade material. The science and technology of electronic materials has attracted somewhat less attention, as compared with device development.

Description: Ever since the work of W.E. Spear and P.G. LeComber had proved that an amorphous semiconductor could indeed also be substitutionally doped, research in the respective field has seen an nearly unprecedented development. The role of hydrogen in atomic and electronic structure as well as in the doping mechanism remains an outstanding problem addressed both to theoreticians and experimentalists, and a highly interesting challenge both to the scientist as well as the engineer.