Defects in Semiconductors I

Defects in Semiconductors I

Description:

This volume focuses on current theoretical and experimental investigations of defects in III-V and II-VI compounds, silicon, germanium, Si-Ge alloys, and amorphous semiconductors. The discussions also address the metastability and superconductivity induced by point defects, dislocations and processing in semiconductors.
An important feature of this book are the special papers on defects in SiC and IV-VI compounds, and the contributions on hot topics such as nonequilibrium diffusion, negative-U defects and several new techniques.

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Info:

Editors:
Nickolay T. Bagraev
THEMA:
TGM
BISAC:
TEC021000
Details:
Proceedings of the 1st National Conference on Defects in Semiconductors (NCDS-1), St. Petersburg, Russia, April 1992
Pages:
691
Year:
1993
ISBN-13:
9780878496662
ISBN-13 (CD):
9783038596134
ISBN-13 (eBook):
9783035702989
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