Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
This collection comprises 117 peerreviewed papers invited from over 70 research institutions in more than 25 countries. These papers, written by internationally recognized experts in the field, review the current state-of-the-art and predict future trends in their respective authors’ fields of research. Fundamental aspects, as well as technological problems associated with defects in electronic materials and devices, are addressed

Gettering and Defect Engineering in Semiconductor Technology VIII

Edited by: H.G. Grimmeiss, L. Ask, M. Kleverman, M. Kittler and H. Richter

Online since: August 1999

Description: Ever since the invention of the transistor, a fantastic and continual growth in silicon technology has been witnessed; leading to yet more complex functions and higher densities of devices. The current book summarises the key issues of this field.

Among other topics, the outlook for silicon wafer technology and silicon materials engineering in the next millennium is reviewed and new approaches to the production of a 200 GHz silicon-based devices are described. Possible applications of dislocation luminescence in silicon are discussed as well as the hopes for, and limitations of, the Si:Er - based 1.54 mm emitter. Various properties of silicon-based materials and heterojunctions are characterised by using novel and state-of-the-art measurement techniques. Hydrogen- and oxygen-related defects, rare-earth impurities as well as radiation and gettering effects are discussed from various points of view.

Gettering and Defect Engineering in Semiconductor Technology VII

Edited by: C. Claeys, J. Vanhellemont, H. Richter and M. Kittler

Online since: July 1997

Description: Defect control relies more and more upon advanced fabrication approaches such as the use of slow pulling rates and hydrogen annealing. Gettering techniques remain of key importance in enhancing the device yield.

Shallow Impurities in Semiconductors V

Edited by: Tsunemasa Taguchi

Online since: January 1993

Description: The volume presents the proceedings of the 5th International Conference on Shallow Impurities in Semiconductors, held in Kobe, Japan, August 1992.

Defects in Semiconductors I

Edited by: Nickolay T. Bagraev

Online since: January 1993

Description: This volume focuses on current theoretical and experimental investigations of defects in III-V and II-VI compounds, silicon, germanium, Si-Ge alloys, and amorphous semiconductors. The discussions also address the metastability and superconductivity induced by point defects, dislocations and processing in semiconductors.
An important feature of this book are the special papers on defects in SiC and IV-VI compounds, and the contributions on hot topics such as nonequilibrium diffusion, negative-U defects and several new techniques.