Defect control relies more and more upon advanced fabrication approaches such as the use of slow pulling rates and hydrogen annealing. Gettering techniques remain of key importance in enhancing the device yield.

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Info:

eBook:

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ToC:

Table of contents

Editors:

C. Claeys, J. Vanhellemont, H. Richter and M. Kittler

DOI:

https://doi.org/10.4028/b-5gLn4I

THEMA:

TGM

BISAC:

TEC021000

Keywords:

Annealing, Deep Level, Defect, Dislocation, DLTS, Gettering, Grown-in Defects, Ion Implantation, Nucleation, Oxygen, Oxygen Precipitates, Oxygen Precipitation, Photoluminescence (PL), Point Defect, Precipitation, Radiation Damage, Silicon, Stress, Thermal Donor, Vacancy

Details:

Proceedings of the 7th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology (GADEST '97), Spa, Belgium, October 1997

Pages:

556

Year:

1997

ISBN-13 (softcover):

9783908450276

ISBN-13 (CD):

9783038599876

ISBN-13 (eBook):

9783035706710

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