State-of-the-art reviews on all the major areas of interest are brought together in this book, namely the role of hydrogen during epitaxial growth, its entry into the material during processing, its subsequent diffusivity and bonding with dopants, other impurities or defects, its effect on device performance and reliability and positive uses for hydrogen in passivating surfaces.

Purchase this book:

eBook

978-3-0357-0482-2

$198.00 *

Add to Cart

978-0-87849-672-3

$325.00

not available

eBook+Print

978-0-87849-672-3

$418.40 *

not available

* 1-User Access (Single User-Price). For Multi-User-Price please fill a contact form

Info:

eBook:

View eBook preview

ToC:

Table of contents

Editors:

S.J. Pearton

DOI:

https://doi.org/10.4028/b-xNOvB6

THEMA:

TGM

BISAC:

TEC021000

Keywords:

Annealing, AsH₃, Cleaning, Deposition, Dopant Passivation, Dopant-Hydrogen Complexes, Dry Etching, ECR, GaAs, Growth, Herojunction Bipolar Transistor (HBT), Hydrogen, Hydrogen Passivation, Implantation, InGaAs, InP, Passivation, PH₃, Process, Wet Etching

Pages:

546

Year:

1994

ISBN-13:

9780878496723

ISBN-13 (CD):

9783038597971

ISBN-13 (eBook):

9783035704822

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions