Books by Keyword: Cleaning

Description: This proceedings volume contains the proceedings of all presentations of the 16th International Symposium on Ultra Clean Processing of Semiconductor Surfaces (UCPSS) 2023. The subject matter of the UCPSS symposium is ultra-clean processing, isotropic selective etching and surface preparation technology in all steps of the fabrication of micro-and nano-electronic integrated circuits. This volume describes the recent progress in the field of ultra clean surfaces, surface cleaning and preparation for the production of micro- and nano-electronic integrated circuits and related subjects. This involves a wide variety of surfaces of mixed composition and with nano-topography. The goal of the processes is to obtain nano precise etching and cleaning resulting in ultra clean surfaces with a very high degree of perfection, i.e. with minimal amounts of residues or defects. This comprises different surface and cleaning steps throughout the entire device manufacturing process.

Description: This proceedings volume describes the recent progress in the field of ultra-clean surfaces and surface cleaning and preparation for the production of micro- and nanoelectronic integrated circuits and related subjects. This involves a wide variety of surfaces of mixed composition and with nano-topography with an aspect ratio of lateral dimension/vertical dimension on the order of 1/10. The goal of the processes is to obtain nano precise etching and cleaning, resulting in ultra-clean surfaces with very few residues or defects. This comprises different surface and cleaning steps throughout the entire device manufacturing process.

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
This volume covers various aspects of ultra-clean technology for the large-scale integration of semiconductors. These include cleaning and contamination control in both front-end-of-line (FEOL) and back-end-of-line (BEOL) processing, as well as cleaning for semiconductor photo-voltaic applications. Also covered are studies of general topics such as particle removal using acoustic enhancement, the removal of metallic contamination, pattern collapse of fine flexible and fragile features, wetting and drying, contamination control and contamination metrology. The FEOL and BEOL contributions also treat the surface chemistry of silicon and other semiconductors, cleaning related to new gate stacks, cleaning at the interconnect level, resist strip and polymer removal, cleaning and contamination control for various new materials and cleaning following CMP (chemical mechanical polishing).

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
The contents of this publication include every conceivable issue related to contamination, cleaning and surface preparation during mainstream large-scale integrated circuit manufacture. Typically, silicon is used as the main semiconductor substrate. However, other semiconducting materials such as SiGe and SiC are currently being used in the source-sink junction areas, and materials such as Ge and III-V compounds are being considered for the transistor channel region of future-generation devices.

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
This collection of 86 peer-reviewed papers covers all aspects of the use of ultra-clean technology for large-scale integration on semiconductors, and cleaning and contamination-control in both front-end-of-line (FEOL) and back-end-of-line (BEOL) processing.

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
This book is sub-divided into 10 different topical sections; each dealing with important issues in surface cleaning and preparation.

Description: Modern semiconductor devices rely upon precise defect engineering. On the one hand: defects are the components needed to generate the electronic architecture of the device. On the other hand: they may – if not carefully controlled– induce failure of that device. During the past fifty years, the electrical and optical properties of defects, their generation, transport, clustering and reactions between them have been investigated intensively. Yet the development of semiconductor technology remains closely connected to the advances made in defect science and engineering. Compared to metals, defect control in silicon is significantly complicated by the open structure of its lattice. As a result, reactions between defects, even at room temperature, have become a central issue in defect engineering.

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
The proceedings of the Fifth International Symposium on Ultra Clean Processing of Silicon Surfaces cover all aspects of ultra-clean Si-technology: cleaning, contamination control, Si-surface chemistry and topography, and its relationship to device performance and process yield. New areas of concern include: cleaning at the interconnect level, resist strip and polymer removal (dry and wet), cleaning and contamination aspects of metallization, wafer backside cleaning and cleaning after Chemical-Mechanical-Polishing (CMP).

Description: The proceedings of the Fourth International Symposium on Ultra Clean Processing of Silicon Surfaces (UCPSS '98) cover all aspects of ultra-clean Si-technology: cleaning, contamination control, Si-surface chemistry and topography, and its relationship to device performance and process yield. New areas of concern include: cleaning at the interconnect level, resist strip and polymer removal (dry and wet), cleaning and contamination aspects of metallization, wafer backside cleaning and cleaning after Chemical-Mechanical-Polishing (CMP).

Description: State-of-the-art reviews on all the major areas of interest are brought together in this book, namely the role of hydrogen during epitaxial growth, its entry into the material during processing, its subsequent diffusivity and bonding with dopants, other impurities or defects, its effect on device performance and reliability and positive uses for hydrogen in passivating surfaces.