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Materials Science Applications of Ion Beam Techniques
Description:
The first particle accelerators were built in the early 1930’s. For a long time, these devices were used exclusively by nuclear physicists. In the 1960’s, extensive developments in measuring techniques occurred, mainly as a result of newly developed semiconductor devices. Further strong interest arose from the semiconductor industry, and ion implantation became widely accepted as being the ultimate tool for Si-based device fabrication.
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Info:
eBook:
ToC:
Editors:
A.G. Balogh and G. Walter
THEMA:
TGM
BISAC:
TEC021000
Keywords:
Amorphisation, Ceramic, Depth-Profiling, Diffusion, GaAs, Heavy Ions, High Energy Irradiation, Ion Beam, Ion Beam Analysis, Ion Implantation, Molecular Dynamic (MD), Radiation Damage, RBS, Rutherford Backscattering, Rutherford Backscattering Spectrometry, Silicon, Silicon Carbide (SiC), SiO2, Sputtering, Thermal Spikes
Details:
Proceedings of the International Symposium on Materials Science Applications of Ion Beam Techniques incorporating the 1st German-Australian Workshop on Ion Beam Analysis, Seeheim, Germany, September 1996
Pages:
512
Year:
1997
ISBN-13:
9780878497676
ISBN-13 (CD):
9783038598367
ISBN-13 (eBook):
9783035705201
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