Books by Keyword: SiO₂

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
The objective of this special collection was to provide a forum for researchers, educators, engineers and government officials, involved in the general areas of soft magnetic materials, soft ferrites, powder cores, composite materials, thin films, metamaterials, magnetic measurements and instrumentation, to disseminate their latest research results and to exchange views on the future research directions of these fields.

Description: These peer-reviewed papers deal with the scientific and technical aspects of ceramic materials, metallic materials, alloys, polymers and computational materials science. The aim of the proceedings was to provide up-to-date data for scientists and engineers working in the materials field. The book will also be a good learning resource for graduate students in the related specialties of Chemistry and Materials Science.
Volume is indexed by Thomson Reuters CPCI-S (WoS).

Description: These 146 peer-reviewed papers cover the current understanding of researchers working in the fields of electronic materials and devices, ferroelectric, piezoelectric and dielectric materials, smart materials, the science and advanced technology of gels and aggregates, and thin-film materials and technology. A useful source of the latest information.

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
Japan is the most active country in carrying out research on Electroceramics. This research field is also rapidly expanding, and has tremendous implications for a wide range of high-tech applications.

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
Sol-gel technology is an important route for the fabrication of inorganic and inorganic-organic composite materials. As is typical of chemical synthesis routes, a wide range of parameters can be used to tailor the product.

Description: The first particle accelerators were built in the early 1930’s. For a long time, these devices were used exclusively by nuclear physicists. In the 1960’s, extensive developments in measuring techniques occurred, mainly as a result of newly developed semiconductor devices. Further strong interest arose from the semiconductor industry, and ion implantation became widely accepted as being the ultimate tool for Si-based device fabrication.