Description: This volume presents a thorough treatment of the subject, covering a full decade of progress in the understanding of Diffusion in Silicon.

Positron Annihilation - ICPA-11

Edited by: Y. C. Jean, Morten Eldrup, David M. Schrader, Roy N. West

Online since: September 1997

Description: For one and a half decades, the application of positron annihilation to condensed-matter physics concentrated on the study of the Fermi surfaces of metals and alloys. As other, often more powerful, techniques for performing this type of study were developed, it appeared that condensed-matter positron physics was going to be relegated to being a niche interest. However, the situation changed dramatically when it was found that measurements of positron annihilation in metals were sensitive to the structures of well-known defects. This discovery, and subsequent research made it a major tool in materials science.
Volume is indexed by Thomson Reuters CPCI-S (WoS).

Gettering and Defect Engineering in Semiconductor Technology VII

Edited by: C. Claeys, J. Vanhellemont, H. Richter and M. Kittler

Online since: July 1997

Description: Defect control relies more and more upon advanced fabrication approaches such as the use of slow pulling rates and hydrogen annealing. Gettering techniques remain of key importance in enhancing the device yield.

Diffusion in Materials DIMAT 1996

Edited by: Helmut Mehrer, Christian Herzig, N.A. Stolwijk and Hartmut Bracht

Online since: January 1997

Description: These proceedings comprise the papers presented at the international conference on 'Diffusion in Materials (DIMAT-96)' held at Schloss Nordkirchen, Germany, August 1996 - the largest international diffusion conference so far held.
The two-volume set therefore covers a very broad spectrum of topics. From the materials point of view, metals, alloys, intermetallics, elemental and compound semiconductors, amorphous materials, nonmetals such as fast ionic conductors, oxides, nitrides, polymers and even melts were discussed.

Defect and Diffusion Forum Vols. 138-139

Edited by: Dr. David J. Fisher

Online since: March 1996

Description: Journal issue

Defects in Semiconductors 18

Edited by: M. Suezawa and H. Katayama-Yoshida

Online since: November 1995

Description: The study of defects in semiconductors has never been independent of the progress in semiconductor technology. With rapid development in semiconductor device technology, novel types of defects as well as very peculiar behavior of defects in semiconductors have been found one after another. New subjects in the basic study of defects have often been arisen from experiences in the practical field. Great progress has also been achieved in device production technology on the basis of the knowledge clarified in the basic field.

Positron Annihilation - ICPA-10

Edited by: Yuan-Jin He, Bi-Song Cao and Y.C. Jean

Online since: November 1994

Description: Positron Annihilation - ICPA-10 presents new results and ideas of researchers who seek more profound understanding of the nature of positron annihilation. All these scientific and technological thoughts are included in these two-volume proceedings, which contain 7 review talks, 203 contributed papers (among them, 20 are invited), and 3 summary talks. The volume is complete with keyword and author indices.

Reactive Phase Formation at Interfaces and Diffusion Processes

Edited by: Y. Limoge and J.L. Bocquet

Online since: May 1994

Description: In a majority of cases, the various processes which give rise to matter transport lead to the formation of new interfaces and to the concommitant development of new phases on either side of these newly created interfaces. The latter play a particularly important role, in the sense that the reactions that produce the new phases take place there.

Defects in Semiconductors 17

Edited by: Helmut Heinrich and Wolfgang Jantsch

Online since: October 1993

Description: This comprehensive issue presents 297 papers that cover a broad range of topics in the fundamental science of imperfections in semiconductor materials including the creation and/or origin, structure, electronic, optical, thermodynamical and chemical properties of defects, often also with strong relevance to technological problems in semiconductor devices.

Diffusion in Materials - DIMAT 1992

Edited by: M. Koiwa, K. Hirano, H. Nakajima and T. Okada

Online since: January 1993

Description: Defect and Diffusion Forum Vols. 95-98