With the continuing evolution of fabrication techniques and new structures for semiconducting materials, the list of new defect phenomena has also increased apace. The present book discusses point defects, defect-assisted diffusion, metal impurity additions, metastable defects, magnetic hyperfine interaction of deep donors in compound semiconductors, and oxygen and hydrogen impurity defects.

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eBook:

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ToC:

Table of contents

Editors:

R.P. Agarwala

DOI:

https://doi.org/10.4028/b-kteK2I

THEMA:

TGM

BISAC:

TEC021000

Keywords:

3d Transition Metal, Arsenic Ion Implantation, Boron, Compound Semiconductor, Contact Interaction, Diffusion, Electrical Properties, Elemental Semiconductors, Frenkel Pairs, II-VI Compounds, Interface, Microdefects, Optical Property, Phase Formation, Point Defect, Reaction Kinetics, Semiconductor, Silicon, Solubility, Vacancy

Pages:

284

Year:

2000

ISBN-13 (softcover):

9783908450443

ISBN-13 (CD):

9783035709032

ISBN-13 (eBook):

9783035706871

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