Books by Keyword: Boron

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
This volume is divided into 3 chapters. The first, focused on Materials and Elaboration Techniques, describes various types of material such as composites, polymers, semiconductors, metals, ceramics, bio-materials, inorganic alloys, textile, porous, crystalline, amorphous and hybrids elaborated by various means such as vapor-phase, liquid-phase, plasma, ion-based and laser-assisted techniques, soft chemistry, self- assembly, bonding, sintering, and including bulk, surface, interface, thin-film and nano-materials. The second chapter, on Characterization Techniques and Properties, covers both physical (optical, structural, electrical, mechanical, magnetic, damage, aging…) and chemical (surface and bulk composition, imaging, impurity, reactivity, catalysis, aging, oxidation, corrosion) aspects. The last chapter, Applications, focuses on subjects such as: (i) environment and energy (renewable energy, storage and energy conversion, transport), (ii) health, biomedical and life science, (iii) electronic devices and systems (micro-nano electronics, power electronics, photonics and optoelectronics, systems, storage and heat management) and (iv) cultural heritage (e.g. archeology).

Description: Heat-treatment and thermal annealing are very common processing steps which have been employed during semiconductor manufacturing right from the beginning of integrated circuit technology. In order to minimize undesired diffusion, and other thermal budget-dependent effects, the trend has been to reduce the annealing time sharply by switching from standard furnace batch-processing (involving several hours or even days), to rapid thermal processing involving soaking times of just a few seconds. This transition from thermal equilibrium, to highly non-equilibrium, processing was very challenging and is still a field ripe for further development.

Description: This periodical edition includes peer-reviewed scientific and engineering papers on all aspects of research in the area of nanoscience and nanotechnologies and wide practical application of the achieved results.

Description: With the continuing evolution of fabrication techniques and new structures for semiconducting materials, the list of new defect phenomena has also increased apace. The present book discusses point defects, defect-assisted diffusion, metal impurity additions, metastable defects, magnetic hyperfine interaction of deep donors in compound semiconductors, and oxygen and hydrogen impurity defects.

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
The technology of microalloying is now, at the end of the 20th century, widely accepted due to the attractive balance of properties which is achievable with the correct control of the interaction between steel chemistry and processing parameters. Microalloying is applied to a broad spectrum of products and has two main goals: to improve the mechanical properties and to save costs.

Description: This volume presents a thorough treatment of the subject, covering a full decade of progress in the understanding of Diffusion in Silicon.