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Rapid Thermal Processing and beyond: Applications in Semiconductor Processing
Description:
Heat-treatment and thermal annealing are very common processing steps which have been employed during semiconductor manufacturing right from the beginning of integrated circuit technology. In order to minimize undesired diffusion, and other thermal budget-dependent effects, the trend has been to reduce the annealing time sharply by switching from standard furnace batch-processing (involving several hours or even days), to rapid thermal processing involving soaking times of just a few seconds. This transition from thermal equilibrium, to highly non-equilibrium, processing was very challenging and is still a field ripe for further development.
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Info:
Editors:
W. Lerch and J. Niess
Keywords:
Activation,
Boron,
Diffusion,
FinFET,
Flash Annealing,
Flash Lamp Annealing,
Gate Dielectric,
Ion Implantation,
Laser Annealing,
Millisecond Annealing,
Pattern Effects,
Plasma Nitridation,
Rapid Thermal Annealing (RTA),
Rapid Thermal Processing,
RTP,
Silicon,
SOI,
Spike Annealing,
Temperature Measurement,
Ultra Shallow Junction
Details:
Special topic volume with invited papers only
ISBN-13 (softcover):
9780878493913
ISBN-13 (CD):
9783908453413
ISBN-13 (eBook):
9783038131731
Review from Ringgold Inc., ProtoView:
This special issue of the periodical Materials Science Forum contains 30 contributions from semiconductor technologists from nine different countries. Material is presented in sections on the various aspects of rapid thermal processing (RTP) and millisecond annealing, and is arranged to follow the major process flow steps in high performance transistor fabrication. Starting with the silicon wafer material itself, the book covers various aspects of the device from advanced gate dielectrics through source/drain engineering, and ends with a summary on fully silicided gates. Chapters are in sections on a review of the field, wafer parameter tuning and defects, surface preparation and gate dielectrics, USJ formation and metrology, advanced silicides formation, pattern effects, temperature measurement, and flash annealing for ULSI and beyond Si. B&w images are included.