Books by Keyword: Gate Dielectric

Description: This special edition presents the results of an evaluation of silicon carbide (SiC) based power device performance and is intended as a valuable resource for researchers, engineers, and graduate students engaged in power semiconductor development and their reliability analysis.

Description: This special edition provides a comprehensive perspective on engineering research results and technological solutions in the area of charge-transport across interfaces and contacts in SiC devices and is intended for researchers, process engineers, and graduate students engaged in the development of next-generation wide-bandgap electronics.

Description: Heat-treatment and thermal annealing are very common processing steps which have been employed during semiconductor manufacturing right from the beginning of integrated circuit technology. In order to minimize undesired diffusion, and other thermal budget-dependent effects, the trend has been to reduce the annealing time sharply by switching from standard furnace batch-processing (involving several hours or even days), to rapid thermal processing involving soaking times of just a few seconds. This transition from thermal equilibrium, to highly non-equilibrium, processing was very challenging and is still a field ripe for further development.