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Performance Analysis of SiC Power Devices

Description:

This special edition presents the results of an evaluation of silicon carbide (SiC) based power device performance and is intended as a valuable resource for researchers, engineers, and graduate students engaged in power semiconductor development and their reliability analysis.

Purchase this book:

978-3-0364-2130-8

$185.00

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Info:

eBook:

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ToC:

Table of contents

Editors:

Prof. Sang-Mo Koo and Prof. Hoon-Kyu Shin

DOI:

https://doi.org/10.4028/b-yS1XPs

THEMA:

PDT, TJF, TJFC, TJFD

BISAC:

TEC008000, TEC020000, TEC021000

Keywords:

Bias Temperature Instability, Charge Pumping, CMOS Technology, Deep Oxide Traps, Dynamic Losses, Electrical Characteristics, Fowler-Nordheim Current, Gate Capacitance, Gate Dielectric, Gate Leakage, Gate Oxide, Gated Hall Measurements, Hall Mobility, Ion-Implanted Phototransistor, Junction Barrier Schottky Diode, Negative-Bias Gate Stress, Parasitic Capacitance, Power Device, Reverse Recovery, Schottky Diodes, Short-Circuit Reliability, SiC MOSFET, Silicon Carbide, Switching Losses, Technology Computer-Aided Design (TCAD), Thermal Stability, Trench Formation, Tunneling

Details:

Special topic volume with invited peer-reviewed papers only

Pages:

142

Year:

2026

ISBN-13 (softcover):

9783036421308

ISBN-13 (eBook):

9783036431307

Permissions:

Creative Commons CC BY 4.0

Ringgold Subjects:

Materials Science, Manufacturing, Electronics