Performance Analysis of SiC Power Devices

Performance Analysis of SiC Power Devices

Description:

This special edition presents the results of an evaluation of silicon carbide (SiC) based power device performance and is intended as a valuable resource for researchers, engineers, and graduate students engaged in power semiconductor development and their reliability analysis.

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Info:

ToC:
Table of contents
Editors:
Sang Mo Koo and Hoon Kyu Shin
DOI:
https://doi.org/10.4028/b-yS1XPs
THEMA:
PDT, TJF, TJFC, TJFD
BISAC:
TEC008000, TEC020000, TEC021000
Keywords:
Bias Temperature Instability, Charge Pumping, CMOS Technology, Deep Oxide Traps, Dynamic Losses, Electrical Characteristics, Fowler-Nordheim Current, Gate Capacitance, Gate Dielectric, Gate Leakage, Gate Oxide, Gated Hall Measurements, Hall Mobility, Ion-Implanted Phototransistor, Junction Barrier Schottky Diode, Negative-Bias Gate Stress, Parasitic Capacitance, Power Device, Reverse Recovery, Schottky Diodes, Short-Circuit Reliability, SiC MOSFET, Silicon Carbide, Switching Losses, Technology Computer-Aided Design (TCAD), Thermal Stability, Trench Formation, Tunneling
Details:
Special topic volume with invited peer-reviewed papers only
Pages:
142
Year:
2026
ISBN-13 (softcover):
9783036421308
ISBN-13 (eBook):
9783036431307
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Ringgold Subjects:

Materials Science, Manufacturing, Electronics