Books by Keyword: SiC MOSFET

Description: This special edition presents the results of an evaluation of silicon carbide (SiC) based power device performance and is intended as a valuable resource for researchers, engineers, and graduate students engaged in power semiconductor development and their reliability analysis.

Description: This special edition explores the broad spectrum of phenomena that govern the functionality, performance, and reliability of SiC-based devices under demanding exploitation conditions and quantum applications. The presented research results will serve as a valuable resource for researchers, engineers, and graduate students working at the intersection of wide-bandgap semiconductors, quantum technologies, and radiation-hardened electronics.

Description: This special edition provides a comprehensive perspective on engineering research results and technological solutions in the area of charge-transport across interfaces and contacts in SiC devices and is intended for researchers, process engineers, and graduate students engaged in the development of next-generation wide-bandgap electronics.

Description: The presented special edition considers the principles, methodologies, and innovative approaches that underpin the practice of developing advanced SiC-based power semiconductor structures. This edition explores concepts for a broad range of devices based on SiC MOSFETs, and it's intended for researchers, engineers, and graduate students in power electronics development and design.

Description: This special edition brings together fundamental and applied aspects of semiconductor materials science with advanced device fabrication and characteristics evaluation techniques. By harmoniously integrating recent advances from materials science, semiconductor physics, and electronic engineering, this book is intended to serve as a valuable resource for researchers, engineers, and graduate students working in wide-bandgap semiconductors and power device technology.

Description: This special edition is devoted to the research on the durability and long-term performance of SiC-based power components and modules under various operating conditions and is intended for researchers, engineers and graduate students engaged in the development of advanced wide-bandgap power electronics.

Description: The appearance of solid-state silicon oxide high-power devices has been a cornerstone in the evolution of modern power electronics, enabling efficient processes of power conversion and power management in a wide array of applications. This special edition aims to provide engineers, researchers, and industry professionals with a deeper understanding of the challenges and solutions associated with maintaining the reliability and stability of solid-state high-power devices.

Description: The relentless advancement in high-power electronics has driven the need for innovative materials and new device architectures. This special edition delves readers into the cutting-edge developments and challenges in the field, with a focus on silicon carbide (SiC) technology. The edition provides a comprehensive overview of the critical aspects of SiC MOSFETs, highlighting their superior switching characteristics and robustness, etc., compared to traditional silicon-based devices. Collected articles not only focus on the theoretical underpinnings but also provide practical insights for engineers in design and real-world applications.

Description: This special edition addresses one of the most critical aspects of semiconductor technology: the presence and impact of defects within solid semiconductor materials on the performance and reliability of electronic devices. The presented edition will be useful to researchers and engineers in the semiconductor industry and will serve as an essential resource for those looking to deepen their understanding of the nature of defects in semiconductor structures and their influences on the efficiency and reliability of power electronic devices.

Description: The development of solid-state semiconductor structures is at the forefront of technological innovation, driving advancements across various applications of microelectronics and high-power devices. The formation and processing of semiconductor solid-state structures involve a series of sophisticated and precision technologies that improve functionality and provide integration of finished components into complex circuits. This special edition is an essential resource for engineers and researchers involved in developing and applying semiconductor technologies.