SiC Devices for Quantum Applications and Harsh Radiation Environments

SiC Devices for Quantum Applications and Harsh Radiation Environments

Description:

This special edition explores the broad spectrum of phenomena that govern the functionality, performance, and reliability of SiC-based devices under demanding exploitation conditions and quantum applications. The presented research results will serve as a valuable resource for researchers, engineers, and graduate students working at the intersection of wide-bandgap semiconductors, quantum technologies, and radiation-hardened electronics.

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Info:

ToC:
Table of contents
Editors:
Sang Mo Koo and Hoon Kyu Shin
DOI:
https://doi.org/10.4028/b-mUKw3c
THEMA:
PDT, TJF, TJFC, TJFD
BISAC:
TEC008000, TEC020000, TEC021000
Keywords:
Channel-Length-Dependent Instability, CMOS, Device Degradation, Dopant Contamination, Electrical Properties, Extreme Environment, Failure Modes, Gamma-Ray Irradiation, Gate Oxide, Heavy-Ion Irradiation, High Dose-Rate Radiation, Light Emitter, Operational Amplifier, Optical Measurements, Pin-Diodes, Quantum Defects, Quantum Sensing, Radiation Tolerance, Radiation-Hardening Design, Reliability, Resistance Degradation, SiC MOSFET, Silicon Carbide, Silicon Vacancies, Simulation, Single Event Burnout Phenomena, Spin Qubits, Technology Computer Aided Design, Threshold Voltage Instability, Total Ionising Dose, Trench SiC MOSFETs, Tunneling Diode, Zener Diode
Details:
Special topic volume with invited peer-reviewed papers only
Pages:
104
Year:
2026
ISBN-13 (softcover):
9783036421322
ISBN-13 (eBook):
9783036431321
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Ringgold Subjects:

Materials Science, Manufacturing, Electronics