Books by Keyword: Silicon Carbide

Description: This special edition provides a focused overview of the state of the art in the areas of control, analysis of characteristics, and effect compensation of silicon carbide structure defects, highlighting the scientific foundations and technological solutions that underpin the development of high-quality SiC devices.

Description: This special edition is a helpful resource for researchers, engineers, and practitioners involved in developing, designing, and manufacturing next-generation power electronic components. The articles cover both fundamental principles and applied methodologies, offering a balanced perspective on modern semiconductor technology.

Description: As a valuable resource for researchers, engineers, and practitioners, this special edition presents a balanced account of the scientific foundations together with the engineering and technological solutions that underpin the advancement and deployment of SiC-based power devices.

Description: This special edition aims to serve as a valuable resource for researchers and engineers engaged in developing and producing advanced semiconductor power devices. The publication provides readers with a balanced view of this field's scientific foundations and applied methodologies.

Description: The presented journal volume of Engineering Chemistry includes articles that reflect the recent developments in chemical synthesis and properties analysis of materials for applications in electronics, chemical production, biofuel synthesis, effective crude oil transportation and corrosion protection. The volume will be helpful for many specialists in applied chemistry and chemical production.

Description: The presented book includes articles on research results in the area of semiconductors based on silicon carbide, gallium nitride and related materials that are widely used today for the production of power solid-state electronic devices. The recent technologies of crystal growth and wafer production and processing techniques, properties of completed semiconductor solid-state structures and devices circuitry, including their applications in sensors, mechatronics, and quantum systems, are explored and analysed in this edition. The book will be valuable to engineers and researchers whose activity is related to the development and production of solid-state electronics. The collected here articles were presented at the 20th International Conference on Silicon Carbide and Related Materials (ICSCRM 2023, 17-22 September 2023, Sorrento, Italy).

Description: Advanced semiconductor technologies have been making significant advancements through the creation and application of new materials and processes that surpass traditional silicon's limitations. The wide-bandgap semiconductors such as Silicon Carbide and Gallium Nitride offer unprecedented opportunities for advancements in high-power and high-frequency microelectronic devices. The presented special edition will be useful to engineers and researchers whose activity is related to technologies of semiconductor structures growth for power electronics and microelectronics devices production.

Description: The appearance of solid-state silicon oxide high-power devices has been a cornerstone in the evolution of modern power electronics, enabling efficient processes of power conversion and power management in a wide array of applications. This special edition aims to provide engineers, researchers, and industry professionals with a deeper understanding of the challenges and solutions associated with maintaining the reliability and stability of solid-state high-power devices.

Description: The relentless advancement in high-power electronics has driven the need for innovative materials and new device architectures. This special edition delves readers into the cutting-edge developments and challenges in the field, with a focus on silicon carbide (SiC) technology. The edition provides a comprehensive overview of the critical aspects of SiC MOSFETs, highlighting their superior switching characteristics and robustness, etc., compared to traditional silicon-based devices. Collected articles not only focus on the theoretical underpinnings but also provide practical insights for engineers in design and real-world applications.

Description: This special edition brings together articles highlighting the latest research and developments in the use of semiconductor structures based on silicon carbide in quantum and mechatronic systems and high-performance sensors. It will be useful to researchers and engineers from the mentioned branches of engineering.