Books by Keyword: Silicon Carbide

Description: This book aims to provide a comprehensive overview of the latest breakthroughs in Silicon Carbide (SiC) and related materials for the development of advanced solid-state electronics. Its scope systematically covers the entire semiconductor value chain, beginning with bulk and epitaxial growth, followed by rigorous defect evaluation and material characterization. Furthermore, the compiled research highlights critical advancements in dielectrics, interface engineering, and the design of high-performance SiC power devices. Reflecting the expanding horizons of the field, the content also explores emerging SiC-based quantum applications alongside thorough assessments of power module robustness and reliability. Ultimately, this collection serves as an essential resource for researchers and engineers dedicated to driving innovation in wide-bandgap semiconductors. All articles compiled in this edition were presented at the 22nd International Conference on Silicon Carbide and Related Materials (ICSCRM, 14–19 September 2025, Busan, Korea).

Description: This special edition focuses on scientific principles and the technologies that underpin the preparation and processing of SiC wafers. The technological operations involved in transforming a bulk SiC crystal into a device-ready substrate are described. The presented information will contribute to continued advances in manufacturing and the development of the next generation of high-performance electronic devices.

Description: This special edition presents the results of an evaluation of silicon carbide (SiC) based power device performance and is intended as a valuable resource for researchers, engineers, and graduate students engaged in power semiconductor development and their reliability analysis.

Description: This special edition explores the broad spectrum of phenomena that govern the functionality, performance, and reliability of SiC-based devices under demanding exploitation conditions and quantum applications. The presented research results will serve as a valuable resource for researchers, engineers, and graduate students working at the intersection of wide-bandgap semiconductors, quantum technologies, and radiation-hardened electronics.

Description: This special edition provides a comprehensive perspective on engineering research results and technological solutions in the area of charge-transport across interfaces and contacts in SiC devices and is intended for researchers, process engineers, and graduate students engaged in the development of next-generation wide-bandgap electronics.

Description: The presented special edition considers the principles, methodologies, and innovative approaches that underpin the practice of developing advanced SiC-based power semiconductor structures. This edition explores concepts for a broad range of devices based on SiC MOSFETs, and it's intended for researchers, engineers, and graduate students in power electronics development and design.

Description: This special edition brings together fundamental and applied aspects of semiconductor materials science with advanced device fabrication and characteristics evaluation techniques. By harmoniously integrating recent advances from materials science, semiconductor physics, and electronic engineering, this book is intended to serve as a valuable resource for researchers, engineers, and graduate students working in wide-bandgap semiconductors and power device technology.

Description: This special edition is devoted to the research on the durability and long-term performance of SiC-based power components and modules under various operating conditions and is intended for researchers, engineers and graduate students engaged in the development of advanced wide-bandgap power electronics.

Description: This special edition addresses the scientific and technological foundations underlying the production of silicon carbide crystals and device-quality epitaxial films. Bulk crystal growth techniques, particularly physical vapour transport, are discussed with emphasis on technological control, defect reduction, polytype stability, and process optimisation, all of which affect final device performance and reliability. The edition will serve as a valuable resource for researchers, engineers, and students working in semiconductor materials and technologies.

Description: The special edition focuses on the investigation of the various stacking faults found in SiC polytypes, analysing their crystallographic nature, formation mechanisms, characterisation methods, and their influence on device properties. By deepening understanding of the conditions that promote the development of these defects, researchers and engineers can improve the quality of SiC substrates and epitaxial layers, supporting the continued advancement and modernisation of related technologies. The presented edition will be helpful for a wide range of specialists in the semiconductor industry.