Books by Keyword: Silicon Carbide

Description: This special edition brings together fundamental and applied aspects of semiconductor materials science with advanced device fabrication and characteristics evaluation techniques. By harmoniously integrating recent advances from materials science, semiconductor physics, and electronic engineering, this book is intended to serve as a valuable resource for researchers, engineers, and graduate students working in wide-bandgap semiconductors and power device technology.

Description: This special edition addresses the scientific and technological foundations underlying the production of silicon carbide crystals and device-quality epitaxial films. Bulk crystal growth techniques, particularly physical vapour transport, are discussed with emphasis on technological control, defect reduction, polytype stability, and process optimisation, all of which affect final device performance and reliability. The edition will serve as a valuable resource for researchers, engineers, and students working in semiconductor materials and technologies.

Description: The special edition focuses on the investigation of the various stacking faults found in SiC polytypes, analysing their crystallographic nature, formation mechanisms, characterisation methods, and their influence on device properties. By deepening understanding of the conditions that promote the development of these defects, researchers and engineers can improve the quality of SiC substrates and epitaxial layers, supporting the continued advancement and modernisation of related technologies. The presented edition will be helpful for a wide range of specialists in the semiconductor industry.

Description: This special edition is devoted to the identification, characterisation, and understanding of the effects of structural critical imperfections of silicon carbide during bulk crystal growth and epitaxial deposition. Emphasis is placed on advanced analytical techniques that provide essential insight into the origin, distribution, and evolution of defects, enabling continuous improvement in crystal growth processes and epitaxial technologies. The publication aims to provide researchers and engineers with a deeper understanding of defect formation and characterisation, which is fundamental to achieving the material perfection required for the creation of reliable and efficient SiC-based electronic devices.

Description: The 18th volume of the journal Engineering Innovations focuses on research results in SIC MOSFET packaging, the design of personal protective equipment, an overview of technologies for green hydrogen production, the thermal analysis of CubeSat, a series of investigations into sustainable power systems and inventory management for ageing rotating equipment.

Description: This special edition presents recent research results and engineering solutions in materials science and treatment technologies, with an emphasis on innovative processing techniques, the development of technological tools, and emerging applications in modern industries and aims to serve as a valuable reference for researchers and engineers seeking insights into the latest trends and technologies shaping modern materials science.

Description: The 90th volume of the journal features peer-reviewed articles dedicated to recent research results in nanomaterials and applied nanotechnologies across a broad spectrum of potential applications, including microelectronics, optoelectronics, photovoltaics, wastewater treatment, energy storage, pharmaceuticals, and high-performance coatings for machine parts. The presented volume will be helpful for a wide range of readers whose activities are related to the development and applications of nanoscale materials and technologies.

Description: Selected peer-reviewed extended articles based on abstracts presented at the 21 International Conference on Silicon Carbide and Related Materials (ICSCRM 2024).

Description: This special edition combines issues related to the reliability and stability of silicon carbide-based electronic devices with an analysis of engineering solutions for their applications in frontier technologies and extreme conditions, providing readers with a comprehensive overview of current advances and future directions of applications.

Description: By integrating technological features of crystal and epitaxial layer growth, physics of defect occurrence processes and procedures for eliminating their effects, and device engineering, this edition provides a comprehensive overview of the current state of research and existing approaches to mitigating defect-related limitations in SiC-based technologies.