Books by Keyword: Silicon Carbide

Description: Advanced semiconductor technologies have been making significant advancements through the creation and application of new materials and processes that surpass traditional silicon's limitations. The wide-bandgap semiconductors such as Silicon Carbide and Gallium Nitride offer unprecedented opportunities for advancements in high-power and high-frequency microelectronic devices. The presented special edition will be useful to engineers and researchers whose activity is related to technologies of semiconductor structures growth for power electronics and microelectronics devices production.

Description: The appearance of solid-state silicon oxide high-power devices has been a cornerstone in the evolution of modern power electronics, enabling efficient processes of power conversion and power management in a wide array of applications. This special edition aims to provide engineers, researchers, and industry professionals with a deeper understanding of the challenges and solutions associated with maintaining the reliability and stability of solid-state high-power devices.

Description: The relentless advancement in high-power electronics has driven the need for innovative materials and new device architectures. This special edition delves readers into the cutting-edge developments and challenges in the field, with a focus on silicon carbide (SiC) technology. The edition provides a comprehensive overview of the critical aspects of SiC MOSFETs, highlighting their superior switching characteristics and robustness, etc., compared to traditional silicon-based devices. Collected articles not only focus on the theoretical underpinnings but also provide practical insights for engineers in design and real-world applications.

Description: This special edition brings together articles highlighting the latest research and developments in the use of semiconductor structures based on silicon carbide in quantum and mechatronic systems and high-performance sensors. It will be useful to researchers and engineers from the mentioned branches of engineering.

Description: This special collection examines the intrinsic properties of semiconductor wafers and substrates, their mechanical, electrical, and thermal characteristics, and also the latest developments in SiC wafer production and processing, substrate preparation, and their integration into high-tech products which are critical to the functionality and reliability of modern electronic devices. By bringing together research and practical insights, the special edition will be a valuable resource for scientists and industry specialists seeking to harness the full potential of silicon carbide in the evolving landscape of innovation in semiconductor technologies.

Description: Full-text papers selected by peer review from the submissions to the Asia Pacific Conference on Silicon Carbide and Related Materials (APCSRM 2022, November 14-16, 2022, Xuzhou, China) and presented in this book cover cutting-edge research on silicon carbide and related materials in the direction of materials, devices, and applications.

Description: This special edition contains articles on the latest research results on materials properties used in devices for energy storage and energy conversion and for power electronics production. Without any doubt, this specialised publication will be useful to professionals in the field of design and production of the aforementioned devices.

Description: The International Conference on Silicon Carbide and Related Materials (ICSCRM) is the most important technical conference series on silicon carbide (SiC) and related materials. Started in Washington, D.C. in 1987, the conference series developed into a bi-annual global forum on SiC from its crystal growth to the reliability in application. After five conferences in the U.S., ICSCRM has been held every two years, alternating between USA, Europe, and Japan. The last three Conferences were held in Giardini Naxos, Italy (2015), Washington, D.C. , USA (2017), and Kyoto, Japan (2019). Due to the pandemic situation in 2020 and 2021, the alternating European edition, the 13th ECSCRM, has been held in 2021, and the 19th ICSCRM has been postponed to 2022. The 19th edition of ICSCRM will be the last of its kind – starting in 2023, the conference series will be united with the European edition. It will form an annual event under the well-established name ICSCRM and a new rotation schedule integrating the SiC communities worldwide.

Description: This special issue presents the research results and engineering developments in the area of silicon carbide semiconductor materials for power electronics and the latest composite and polymer materials for machinery and textile production. The special edition will be useful to engineers whose activity is related to research and developments in the area of power electronics and modern composite and polymer materials.

Description: The presented special edition is devoted to the latest research in semiconductor materials and devices on silicon carbide and the design and research of machines and equipment. This issue will be helpful to specialists engaged in the design and production of power electronics and to mechanical engineers.