Books by Keyword: Silicon Carbide

Description: This special edition comprehensively overviews state-of-the-art technologies for designing structures and analysing functional characteristics of SiC-based devices and integrated circuits, which, in modern conditions of scientific and technological progress, have wide applications in many engineering and manufacturing fields.

Description: This special edition provides a comprehensive overview of the latest process enhancements that underpin the continued advancement of SiC-based device technologies by addressing methods of compound semiconductor processing and technologies of electronics device structure forming with a focus on end-device reliability.

Description: By combining perspective materials processing techniques, device engineering, and circuit integration methods, this special edition provides a comprehensive overview of the state of the art in SiC-based power electronics device fabrication technologies, serving as a valuable resource for researchers, engineers, and practitioners in the field.

Description: This special edition analyses recent technological advances, modern design methodologies, and performance evaluation and parameters optimisation techniques of SiC-based power devices.

Description: This special edition provides a focused overview of the state of the art in the areas of control, analysis of characteristics, and effect compensation of silicon carbide structure defects, highlighting the scientific foundations and technological solutions that underpin the development of high-quality SiC devices.

Description: This special edition is a helpful resource for researchers, engineers, and practitioners involved in developing, designing, and manufacturing next-generation power electronic components. The articles cover both fundamental principles and applied methodologies, offering a balanced perspective on modern semiconductor technology.

Description: As a valuable resource for researchers, engineers, and practitioners, this special edition presents a balanced account of the scientific foundations together with the engineering and technological solutions that underpin the advancement and deployment of SiC-based power devices.

Description: This special edition aims to serve as a valuable resource for researchers and engineers engaged in developing and producing advanced semiconductor power devices. The publication provides readers with a balanced view of this field's scientific foundations and applied methodologies.

Description: The presented journal volume of Engineering Chemistry includes articles that reflect the recent developments in chemical synthesis and properties analysis of materials for applications in electronics, chemical production, biofuel synthesis, effective crude oil transportation and corrosion protection. The volume will be helpful for many specialists in applied chemistry and chemical production.

Description: The presented book includes articles on research results in the area of semiconductors based on silicon carbide, gallium nitride and related materials that are widely used today for the production of power solid-state electronic devices. The recent technologies of crystal growth and wafer production and processing techniques, properties of completed semiconductor solid-state structures and devices circuitry, including their applications in sensors, mechatronics, and quantum systems, are explored and analysed in this edition. The book will be valuable to engineers and researchers whose activity is related to the development and production of solid-state electronics. The collected here articles were presented at the 20th International Conference on Silicon Carbide and Related Materials (ICSCRM 2023, 17-22 September 2023, Sorrento, Italy).