This special edition combines issues related to the reliability and stability of silicon carbide-based electronic devices with an analysis of engineering solutions for their applications in frontier technologies and extreme conditions, providing readers with a comprehensive overview of current advances and future directions of applications.

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978-3-0364-0916-0

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eBook:

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ToC:

Table of contents

Editors:

Prof. Victor Veliadis and Dr. Arash Salemi

DOI:

https://doi.org/10.4028/b-ah2a5A

THEMA:

TBN, TGM, TJFC, TJFD

BISAC:

TEC008000, TEC020000, TEC021000

Keywords:

Bias Temperature Instability, Converter, Converter Loss, Electrical Parameters, Excessive Channel Leakage, Gate Oxide Breakdown, Gate Oxide Screening, Gate Switching Instability, Overcurrent, PiN Diode, Quantum Applications, Reliability, Sic Photodiode, Silicon Carbide, Space Electronics, TCAD Model, Time-Dependent Dielectric Breakdown, Ultraviolet Photodetector

Details:

Special topic volume with invited peer-reviewed papers only

Pages:

134

Year:

2025

ISBN-13 (softcover):

9783036409160

ISBN-13 (eBook):

9783036419169

Permissions:

Creative Commons CC BY 4.0

Ringgold Subjects:

Materials Science, Nanoscience, Manufacturing