Books by Keyword: Gate Oxide Breakdown

Description: This special edition combines issues related to the reliability and stability of silicon carbide-based electronic devices with an analysis of engineering solutions for their applications in frontier technologies and extreme conditions, providing readers with a comprehensive overview of current advances and future directions of applications.

Description: The processing and properties analysis of semiconductor structures are standing at the cutting edge of technological innovation, propelling advancements in the production of solid-state electronics. These technologies require a range of sophisticated and precise operations and are crucial in modifying materials to achieve the desired electrical characteristics of completed structures. The presented special edition will be an invaluable resource for engineers and researchers involved in the development in the area of semiconductor technologies.

Description: Full-text papers selected by peer review from the submissions to the Asia Pacific Conference on Silicon Carbide and Related Materials (APCSRM 2022, November 14-16, 2022, Xuzhou, China) and presented in this book cover cutting-edge research on silicon carbide and related materials in the direction of materials, devices, and applications.