Books by Keyword: PiN Diode

Description: This special edition combines issues related to the reliability and stability of silicon carbide-based electronic devices with an analysis of engineering solutions for their applications in frontier technologies and extreme conditions, providing readers with a comprehensive overview of current advances and future directions of applications.

Description: This special edition comprehensively overviews state-of-the-art technologies for designing structures and analysing functional characteristics of SiC-based devices and integrated circuits, which, in modern conditions of scientific and technological progress, have wide applications in many engineering and manufacturing fields.

Description: This special edition analyses recent technological advances, modern design methodologies, and performance evaluation and parameters optimisation techniques of SiC-based power devices.

Description: The aim of this special collection of peer-reviewed papers is to present recent progress in crystal growth, in the characterization and control of material properties, as well as in other basic research issues concerning silicon carbide (SiC) and other wide-bandgap semiconductors such as group-III nitrides and diamond. The latest research results relevant to wafer production processes, device fabrication technologies and device applications are discussed. These included the latest results in the development and commercialization of advanced devices and circuits used for energy saving, high-voltage switching, high-frequency high-power amplification and high-temperature operation. Work on the growth, characterization and device exploitation of epitaxial graphene was also covered. Evolving industrial products and capabilities were also highlighted.
Volume is indexed by Thomson Reuters CPCI-S (WoS).

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
Silicon Carbide (SiC), Gallium Nitride (GaN) and Diamond are examples of wide-bandgap semiconductors having chemical, electrical and optical properties which make them very attractive for the fabrication of high-power and high-frequency electronic devices, as well as light-emitters and sensors which have to operate under harsh conditions.

Description: Because of their many superior properties, including a wide band-gap and high breakdown field, which are different to those of conventional semiconductors such as Si and GaAs, compounds such as SiC, III-Nitrides and related materials are currently attracting increasing attention and are being targeted as possible solutions in a variety of problematic fields of electronic application: including high temperature, high power, radiation-resistant and microwave use.
Volume is indexed by Thomson Reuters CPCI-S (WoS).